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IXTQ110N10P

P1-P3P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 110N10P
IXTT 110N10P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20406080100120
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 50V
I
D
= 55A
I
G
= 10mA
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
4567891011
V
G S
- Volts
I
D
- Amperes
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0 50 100 150 200 250 300
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.40.60.8 1 1.21.41.61.8 2
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1 10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXTQ 110N10P
IXTT 110N10P
Fig. 13. M axim um Trans ie nt The rm al Res is tance
0.01
0.10
1.00
0.1 1 10 100 1000
Pu ls e W id th - m illis e c onds
R
( t h ) J C
-
ºC / W
P1-P3P4-P5

IXTQ110N10P

Mfr. #:
Buy IXTQ110N10P
Manufacturer:
Littelfuse
Description:
MOSFET 110 Amps 100V 0.015 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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