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APT75DQ120BG

P1-P3P4-P4
053-4229 Rev D 5-2011
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular TO-247 Package or
Surface Mount D
3
PAK Package
• Low Forward Voltage
• Low Leakage Current
• Avalanche Energy Rated
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• PFC
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
1200V 75A
APT75DQ120B APT75DQ120S
APT75DQ120BG* APT75DQ120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
μA
pF
MIN TYP MAX
2.8 3.3
3.48
2.17
100
500
50
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 75A
I
F
= 150A
I
F
= 75A, T
J
= 125°C
V
R
= 1200V
V
R
= 1200V, T
J
= 125°C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 113°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
T
L
UNIT
Volts
Amps
mJ
°C
APT75DQ120B_S(G)
1200
75
121
540
20
-55 to 175
300
1 - Cathode
2 - Anode
Back of Case -Cathode
1
2
T
O
-
2
4
7
1
2
D
3
PAK
1
2
(S)
(B)
Microsemi Website - http://www.microsemi.com
APT75DQ120B_S(G)
DYNAMIC CHARACTERISTICS
053-4229 Rev D 5-2011
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
MIN TYP MAX
-
32
- 325
- 715
- 5 -
- 420
- 3340
- 13 -
- 195
- 5810
- 42
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 75A, di
F
/dt = -200A/μs
V
R
= 800V, T
C
= 25°C
I
F
= 75A, di
F
/dt = -200A/μs
V
R
= 800V, T
C
= 125°C
I
F
= 75A, di
F
/dt = -1000A/μs
V
R
= 800V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/μs, V
R
= 30V, T
J
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Package Weight
Maximum Mounting Torque
Symbol
R
θJC
W
T
Torque
MIN TYP MAX
.31
0.22
5.9
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
D = 0.9
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
053-4229 Rev D 5-2011
APT75DQ120B_S(G)
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
R
= 800V
t
rr
Q
rr
Q
rr
t
rr
I
RRM
500
400
300
200
100
0
50
40
30
20
10
0
Duty cycle = 0.5
T
J
= 175°C
140
120
100
80
60
40
20
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
0
200
180
160
140
120
100
80
60
40
20
0
8000
7000
6000
5000
4000
3000
2000
1000
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/μs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/μs) -di
F
/dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 125°C
V
R
= 800V
T
J
= 125°C
V
R
= 800V
0 1.0 2.0 3.0 4.0 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
37.5A
75A
150A
150A
37.5A
75A
150A
75A
37.5A
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/μs)
I
F(AV)
(A)
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
P1-P3P4-P4

APT75DQ120BG

Mfr. #:
Buy APT75DQ120BG
Manufacturer:
Microchip / Microsemi
Description:
Rectifiers FG, FRED, 1200V, TO-247, RoHS
Lifecycle:
New from this manufacturer.
Delivery:
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