TSL2550
AMBIENT LIGHT SENSOR
WITH SMBus INTERFACE
TAOS029L − OCTOBER 2007
3
The LUMENOLOGY r Company
r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
Electrical Characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
O
= 50 μA 0.01
V
OL
SMBus output low voltage
I
O
= 4 mA 0.4
V
Active, VSMBCLK and VSMDATA = V
DD,
V
DD
= 3.3 V ± 5%
0.35 0.6 mA
I
DD
Supply current
Power down, VSMBCLK and VSMDATA =
V
DD,
V
DD
= 3.3 V ± 5%
10 μA
I
IH
High level input current VI = V
DD
5 μA
I
IL
Low level input current VI = 0 −5 μA
Operating Characteristics, V
DD
= 3.3 V, T
A
= 25C (unless otherwise noted) (see Notes 2, 3, 4)
PARAMETER TEST CONDITIONS CHANNEL MIN TYP MAX UNIT
Ch0 1
E
e
= 0
Ch1 1
ADC count value standard mode
λ
= 640 nm
Ch0 639 799 959
ADC count value, standard mode
E
e
= 72 μW/cm
2
Ch1 85
counts
λ
= 940 nm
Ch0 511 799 1039
E
e
= 140 μW/cm
2
Ch1 703
Ch0 1
E
e
= 0
Ch1 1
ADC count value extended mode
λ
= 640 nm
Ch0 155
ADC count value, extended mode
E
e
= 72 μW/cm
2
Ch1 16
counts
λ
= 940 nm
Ch0 155
E
e
= 140 μW/cm
2
Ch1 139
ADC count value ratio: Ch1/Ch0,
λ
p
= 640 nm, E
e
= 72 μW/cm
2
0.070 0.106 0.175
ADC count value ratio: Ch1/Ch0
,
standard mode
λ
p
= 940 nm, E
e
= 140 μW/cm
2
0.70 0.88 1.20
λ
= 640 nm
Ch0 11.1
Irradiance responsivity standard mode
E
e
= 72 μW/cm
2
Ch1 1.2
counts/
R
e
Irradiance responsivity, standard mode
λ
= 940 nm
Ch0 5.7
(μW/
m
2
E
e
= 140 μW/cm
2
Ch1 5
Fluorescent light source: 300 Lux
Ch0 2.8
Illuminance responsivity standard mode
Fluorescent light source: 300 Lux
Ch1 0.23
counts/
R
v
Illuminance responsivity, standard mode
Incandescent light source: 50 Lux
Ch0 19
lux
Incandescent light source: 50 Lux
Ch1 13
(Sensor Lux) / (actual Lux), standard mode
Fluorescent light source: 300 Lux 0.65 1 1.35
(Sensor Lux) / (actual Lux)
,
(Note 5)
Incandescent light source: 50 Lux 0.5 1 1.5
NOTES: 3. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs
and infrared 940 nm LEDs are used for final product testing for compatibility with high volume production.
4. The 640 nm irradiance E
e
is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength
λp = 640 nm and spectral halfwidth Δλ½ = 17 nm.
5. The 940 nm irradiance E
e
is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength
λp = 940 nm and spectral halfwidth Δλ½ = 40 nm.
6. The sensor Lux is calculated using the empirical formula shown on p. 11 of this data sheet based on measured Ch0 and Ch1 ADC
count values for the light source specified. Actual Lux is obtained with a commercial luxmeter. The range of the (sensor Lux) / (actual
Lux) ratio is estimated based on the variation of the 640 nm and 940 nm optical parameters. Devices are not 100% tested with
fluorescent or incandescent light sources.