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FFPF05U60STTU

P1-P3P4-P4
©2000 Fairchild Semiconductor International
FFPF05U60S
Rev. F, September 2000
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
T
C
=25°
°°
°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
T
C
=25 °
°°
°C unless otherwise noted
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Symbol Parameter Value Units
V
RRM
Peak Repetitive Reverse Voltage 600 V
I
F(AV)
Average Rectified Forward Current @ T
C
= 100°C5 A
I
FSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
30 A
T
J,
T
STG
Operating Junction and Storage Temperature - 65 to +150 °C
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case 5.0 °C/W
Symbol Parameter Min. Typ. Max. Units
V
FM
*
Maximum Instantaneous Forward Voltage
I
F
= 5A
I
F
= 5A
T
C
= 25 °C
T
C
= 100 °C
2.3
2.2
V
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25 °C
T
C
= 100 °C
2.5
25
µA
t
rr
I
rr
Q
rr
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=5A, di/dt = 200A/µs)
80
5.5
220
ns
A
nC
W
AVL
Avalanche Energy 1.0 mJ
FFPF05U60S
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• General purpose
• Switching mode power supply
• Free-wheeling diode for motor application
• Power switching circuits
TO-220F
1 2
1. Cathode 2. Anode
©2000 Fairchild Semiconductor International Rev. F, September 2000
FFPF05U60S
Typical Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 3. Typical Junction Capacitance
Figure 5. Typical Reverse Recovery Current
vs. di/dt
Figure 2. Typical Reverse Current
vs. Reverse Voltage
Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 6. Forward Current Derating Curve
0.1
1
10
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 25
o
C
T
C
= 100
o
C
Forward Voltage , V
F
[V]
Forward Current , I
F
[A]
0.1 1 10 100
25
50
Typical Capacitance
at 0V = 30 pF
Capacitance , Cj [pF]
Reverse Voltage , V
R
[V]
100 500
0
1
2
3
4
5
6
7
8
9
10
I
F
= 5A
T
C
= 25
o
C
Reverse Recovery Current , I
rr
[A]
di/dt [A/
µ
s]
100 200 300 400 500 600
1E-4
1E-3
0.01
0.1
1
10
100
T
C
= 100
o
C
T
C
= 25
o
C
Reverse Current , I
R
[
µ
A]
Reverse Voltage , V
R
[V]
100 500
30
40
50
60
70
80
90
I
F
= 5A
T
C
= 25
o
C
Reverse Recovery Time , t
rr
[ns]
di/dt [A/
µ
s]
60 80 100 120 140 160
0
1
2
3
4
5
6
7
8
DC
Average Forward Current , I
F(AV)
[A]
Case Temperature , T
C
[
o
C]
©2000 Fairchild Semiconductor International
Rev. F, September 2000
FFPF05U60S
Package Dimensions
TO-220F 2L
Dimensions in Millimeters
2.54
±0.20
0.80
±0.10
0.35
±0.10
2.76
±0.20
MAX1.47
(1.00x45°)
(0.70)
3.30
±0.10
15.87
±0.20
(1.80)
(6.50)
6.68
±0.20
15.80
±0.20
9.75
±0.30
12.00
±0.20
4.70
±0.20
10.16
±0.20
9.40
±0.20
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
P1-P3P4-P4

FFPF05U60STTU

Mfr. #:
Buy FFPF05U60STTU
Manufacturer:
ON Semiconductor
Description:
DIODE GEN PURP 600V 5A TO220F
Lifecycle:
New from this manufacturer.
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