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AON6926

P1-P3P4-P6P7-P9P10-P10
AON6926
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
17
5
2
10
0
18
40
0
20
40
60
80
100
12345
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
0
3
6
9
12
15
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
R
DS(ON)
(m
Ω
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
V
GS
=4.5V
I
D
=20A
V
GS
=10V
I
D
=20A
0
5
10
15
20
25
246810
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(m
Ω
)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25°C
125°C
0
20
40
60
80
100
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=3V
3.5V
4.5V
10V
4V
Rev0 : July 2010 www.aosmd.com Page 7 of 10
AON6926
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
40
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
s
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0
2
4
6
8
10
0 3 6 9 12 15 18
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
200
400
600
800
1000
1200
1400
1600
1800
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
JC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
C
=25°C
R
θJC
=3.6°C/W
10ms
Rev0 : July 2010 www.aosmd.com Page 8 of 10
AON6926
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Z
θ
JA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
100
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
I
AR
(A) Peak Avalanche Current
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
10
20
30
40
50
60
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
T
A
=25°C
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
Power (W)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
R
θJA
=60°C/W
Rev0 : July 2010 www.aosmd.com Page 9 of 10
P1-P3P4-P6P7-P9P10-P10

AON6926

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Description:
MOSFET 2N-CH 30V 11A/12A 8DFN
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