IRL2203NPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 7.0 V
GS
= 10V, I
D
= 60A
––– ––– 10 V
GS
= 4.5V, I
D
= 48A
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 73 ––– ––– S V
DS
= 25V, I
D
= 60A
––– ––– 25
µA
V
DS
= 30V, V
GS
= 0V
––– ––– 250 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 60 I
D
= 60A
Q
gs
Gate-to-Source Charge ––– ––– 14 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 33 V
GS
= 4.5V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= 15V
t
r
Rise Time ––– 160 ––– I
D
= 60A
t
d(off)
Turn-Off Delay Time ––– 23 ––– R
G
= 1.8Ω
t
f
Fall Time ––– 66 ––– V
GS
= 4.5V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 3290 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 1270 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 170 ––– pF ƒ = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy ––– 1320290 mJ I
AS
= 60A, L = 0.16mH
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C, I
S
= 60A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 56 84 ns T
J
= 25°C, I
F
= 60A
Q
rr
Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
116
400
A
Starting T
J
= 25°C, L = 0.16mH
R
G
= 25Ω, I
AS
= 60A, V
GS
=10V (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤ 60A, di/dt ≤ 110A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance ––– 7.5 –––
L
D
Internal Drain Inductance ––– 4.5 –––
I
DSS
Drain-to-Source Leakage Current
mΩ
