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NUD3124DMT1

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2002
October, 2016 − Rev. 13
1 Publication Order Number:
NUD3124/D
NUD3124, SZNUD3124
Automotive Inductive Load
Driver
This micro−integrated part provides a single component solution to
switch inductive loads such as relays, solenoids, and small DC motors
without the need of a free−wheeling diode. It accepts logic level
inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
• Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
• Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
• Replaces 3 or 4 Discrete Components for Lower Cost
• Internal Zener Eliminates Need for Free−Wheeling Diode
• Meets Load Dump and other Automotive Specs
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Typical Applications
• Automotive and Industrial Environment
• Drives Window, Latch, Door, and Antenna Relays
Benefits
• Reduced PCB Space
• Standardized Driver for Wide Range of Relays
• Simplifies Circuit Design and PCB Layout
• Compliance with Automotive Specifications
Gate (1)
10 k
100 K
Drain (3)
Source (2)
INTERNAL CIRCUIT DIAGRAMS
Gate (2)
10 k
100 K
Drain (6)
Source (1)
Gate (5)
Drain (3)
Source (4)
10 k
100 K
CASE 318 CASE 318F
www.onsemi.com
MARKING DIAGRAMS
SOT−23
CASE 318
STYLE 21
JW6 MG
G
JW6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
SC−74
CASE 318F
STYLE 7
JW6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
JW6 MG
G
1
2
3
1
6
Device Package Shipping
†
ORDERING INFORMATION
NUD3124LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUD3124DMT1G SC−74
(Pb−Free)
3000 / Tape &
Reel
SZNUD3124LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZNUD3124DMT1G SC−74
(Pb−Free)
3000 / Tape &
Reel
NUD3124, SZNUD3124
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Symbol
Rating Value Unit
V
DSS
Drain−to−Source Voltage – Continuous
(T
J
= 125°C)
28 V
V
GSS
Gate−to−Source Voltage – Continuous
(T
J
= 125°C)
12 V
I
D
Drain Current – Continuous
(T
J
= 125°C)
150 mA
E
Z
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(T
J
Initial = 85°C)
250 mJ
P
PK
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(T
J
Initial = 85°C)
20 W
E
LD1
Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4)
(Suppressed Waveform: V
s
= 45 V, R
SOURCE
= 0.5 W, T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(T
J
Initial = 85°C)
80 V
E
LD2
Inductive Switching Transient 1, Drain−to−Source
(Waveform: R
SOURCE
= 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(T
J
Initial = 85°C)
100 V
E
LD3
Inductive Switching Transient 2, Drain−to−Source
(Waveform: R
SOURCE
= 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(T
J
Initial = 85°C)
300 V
Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 W or more)
−14 V
Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V
ESD Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2,000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay’s coils/inductive loads higher than 80 W, see Figure 4.
NUD3124, SZNUD3124
www.onsemi.com
3
THERMAL CHARACTERISTICS
Symbol Rating Value Unit
T
A
Operating Ambient Temperature −40 to 125 °C
T
J
Maximum Junction Temperature 150 °C
T
STG
Storage Temperature Range −65 to 150 °C
P
D
Total Power Dissipation (Note 5) SOT−23
Derating above 25°C
225
1.8
mW
mW/°C
P
D
Total Power Dissipation (Note 5) SC−74
Derating above 25°C
380
3.0
mW
mW/°C
R
q
JA
Thermal Resistance Junction–to–Ambient (Note 5) SOT−23
SC−74
556
329
°C/W
5. Mounted onto minimum pad board.
P1-P3P4-P6P7-P9P10-P10

NUD3124DMT1

Mfr. #:
Buy NUD3124DMT1
Manufacturer:
ON Semiconductor
Description:
MOSFET 28V Industrial Relay
Lifecycle:
New from this manufacturer.
Delivery:
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