IRLR7833TRPBF Datasheet IRLR7833TRPBF, IRLR7833TRLPBF, IRLR7833PBF | P1-P3

www.irf.com 1

05/19/09

IRLR7833PbF

IRLU7833PbF

HEXFET

®

Power MOSFET

Notes  through  are on page 11

Applications

Benefits

l Very Low RDS(on) at 4.5V V

GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Lead-Free

D-Pak

IRLR7833PbF

I-Pak

IRLU7833PbF

V

DSS

R

DS(on)

max

Qg

30V

4.5m

33nC

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C

Maximum Power Dissipation

W

P

D

@T

C

= 100°C

Maximum Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 1.05

R

θJA

Junction-to-Ambient (PCB Mount)

––– 50 °C/W

R

θJA

Junction-to-Ambient ––– 110

300 (1.6mm from case)

10 lbf

in (1.1N m)

Max.

140

99

560

± 20

30

-55 to + 175

140

0.95

71

PD - 95092C

IRLR/U7833PbF

2 www.irf.com

S

D

G

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. T

y

p. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V

∆Β

V

DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 3.6 4.5

––– 4.4 5.5

V

GS(th)

Gate Threshold Voltage 1.4 ––– 2.3 V

∆

V

GS(th)

/

∆

T

J

Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 66 ––– ––– S

Q

g

Total Gate Charge ––– 33 50

Q

gs1

Pre-Vth Gate-to-Source Charge ––– 8.7 –––

Q

gs2

Post-Vth Gate-to-Source Charge ––– 2.1 –––

Q

gd

Gate-to-Drain Charge ––– 13 –––

Q

godr

Gate Charge Overdrive ––– 9.9 ––– See Fig. 16

Q

sw

Switch Char

g

e (Q

gs2

+ Q

gd

)

––– 15 –––

Q

oss

Output Charge ––– 22 ––– nC

t

d(on)

Turn-On Delay Time ––– 14 –––

t

r

Rise Time ––– 6.9 –––

t

d(off)

Turn-Off Delay Time ––– 23 –––

t

f

Fall Time ––– 15 –––

C

iss

Input Capacitance ––– 4010 –––

C

oss

Output Capacitance ––– 950 –––

C

rss

Reverse Transfer Capacitance ––– 470 –––

Avalanche Characteristics

Parameter Units

E

AS

Si

n

gl

e

P

u

l

se

A

va

l

anc

h

e

E

ner

gy

mJ

I

AR

A

va

l

anc

h

e

C

urrent

A

E

AR

R

epet

i

t

i

ve

A

va

l

anc

h

e

E

ner

gy

mJ

Diode Characteristics

Parameter Min. T

y

p. Max. Units

I

S

Continuous Source Current ––– –––

140

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 560

(

Bod

y

Diode

)

V

SD

Diode Forward Voltage ––– ––– 1.0 V

t

rr

Reverse Recovery Time ––– 39 58 ns

Q

rr

Reverse Recovery Charge ––– 37 55 nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

ns

pF

m

Ω

µA

nA

nC

MOSFET symbol

–––

V

GS

= 4.5V

Typ.

–––

I

D

= 12A

V

GS

= 0V

V

DS

= 15V

Clamped Inductive Load

T

J

= 25°C, I

F

= 12A, V

DD

= 15V

di/dt = 100A/

µ

s

T

J

= 25°C, I

S

= 12A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

V

DS

= 15V, I

D

= 12A

V

DS

= 16V, V

GS

= 0V

V

DD

= 15V, V

GS

= 4.5V

I

D

= 12A

V

DS

= 16V

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 15A

V

GS

= 4.5V, I

D

= 12A

V

GS

= 20V

V

GS

= -20V

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 24V, V

GS

= 0V

V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

Conditions

14

Max.

530

20

ƒ = 1.0MHz

IRLR/U7833PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 30A

V

GS

= 10V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

BOTTOM 2.7V

≤

60µs PULSE WIDTH

Tj = 25°C

2.7V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.7V

≤

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

BOTTOM 2.7V

1 2 3 4 5

V

GS

, Gate-to-Source Voltage (V)

1.0

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V

≤

60µs PULSE WIDTH

IRLR7833TRPBF

IRLR7833TRPBF

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