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74AHC1G126W5-7

P1-P3P4-P6P7-P9
74AHC1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
74AHC1G126
Document number: DS35177 Rev. 1 - 2
4 of 9
www.diodes.com
March 2011
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
Symbol Parameter Test Conditions
V
CC
25ºC -40ºC to 85ºC -40ºC to 125ºC
Unit
Min Typ. Max Min Max Min Max
V
OH
High Level
Output
Voltage
I
OH
= -50μA
2V 1.9 2 1.9 1.9
V
3V 2.9 3 2.9 2.9
4.5V 4.4 4.5 4.4 4.4
I
OH
= -4mA
3V 2.58 2.48 2.40
I
OH
= -8mA
4.5V 3.94 3.8 3.70
V
OL
Low Level
Output
Voltage
I
OL
= 50μA
2V 0.1 0.1 0.1
V
3V 0.1 0.1 0.1
4.5V 0.1 0.1 0.1
I
OL
= 4mA
3V 0.36 0.44
0.55
I
OL
= 8mA
4.5V 0.36 0.44
0.55
I
I
Input Current
V
I
= 5.5 V or GND
0 to 5.5V ± 0.1 ± 1
± 2 μA
I
OZ
Z State
Leakage
Current
V
O
=0 to 5.5 V
5.5V 0.25 2.5 10 μA
I
CC
Supply
Current
V
I
= 5.5V or GND
I
O
=0
5.5V 1 10
40 μA
C
I
Input
Capacitance
V
I
= V
CC
– or GND
5.5V 2.0 10 10
10 pF
θ
JA
Thermal
Resistance
Junction-to-
Ambient
SOT25
(Note 4)
195
o
C/W
SOT353 430
θ
JC
Thermal
Resistance
Junction-to-
Case
SOT25
(Note 4)
58
o
C/W
SOT353 155
Note: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
74AHC1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
74AHC1G126
Document number: DS35177 Rev. 1 - 2
5 of 9
www.diodes.com
March 2011
© Diodes Incorporated
NEW PRODUCT
Switching Characteristics
V
CC
= 3.3V ± 0.3 (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
25ºC -40ºC to 85ºC -40ºC to 125ºC
Unit
Min Typ. Max Min Max Min Max
t
pd
A Y
C
L
=15pF
0.6 4.4 8.0
0.6 9.5
0.6 10.0
ns
C
L
=50pF
0.6 6.3 11.5
0.6 13.0
0.6 14.5
ns
t
en
OE Y
C
L
=15pF
0.6 4.9 8.0
0.6 9.5
0.6 10.0
ns
C
L
=50pF
0.6 7.0 11.5
0.6 13.0
0.6 14.5
ns
t
dis
OE Y
C
L
=15pF
0.6 6.3 9.7
0.6 11.5
0.6 12.5
ns
C
L
=50pF
0.6 9.0 13.2
0.6 15.0
0.6 16.5
ns
V
CC
= 5V ± 0.5V (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
25ºC -40 ºC to 85 ºC -40 ºC to 125 ºC
Unit
Min Typ. Max Min Max Min Max
t
pd
A Y
C
L
=15pF
0.6 3.4 5.5
0.6 6.5
0.6 7.0
ns
C
L
=50pF
0.6 4.7 7.5
0.6 8.5
0.6 9.5
ns
t
en
OE Y
C
L
=15pF
0.6 3.6 5.6
0.6 6.3
0.6 7.0
ns
C
L
=50pF
0.6 5.4 8.0
0.6 9.0
0.6 9.5
ns
t
dis
OE Y
C
L
=15pF
0.6 4.3 6.8
0.6 8.0
0.6 8.5
ns
C
L
=50pF
0.6 6.1 8.8
0.6 10.0
0.6 11.0
ns
Operating Characteristics
T
A
= 25 ºC
Parameter
Test
Conditions
V
CC
= 5 V
Unit
Typ.
C
pd
Power dissipation capacitance
f = 1 MHz
No Load
12 pF
74AHC1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
74AHC1G126
Document number: DS35177 Rev. 1 - 2
6 of 9
www.diodes.com
March 2011
© Diodes Incorporated
NEW PRODUCT
Parameter Measurement Information
R
L
C
L
(see Note A)
Under Test
Vcc
Open
GND
S1
=
1 kΩ
TEST S1
t
PLH
/t
PHL
Open
t
PLZ
/t
PZL
Vload
t
PHZ
/t
PZH
GND
V
CC
Inputs
V
M
C
L
V∆
V
I
t
r
/t
f
3.3V±0.3V
V
CC
≤3ns
V
CC
/2
15pF 0.3V
5V±0.5V
V
CC
≤3ns
V
CC
/2
15pF 0.3V
3.3V±0.3V
V
CC
≤3ns
V
CC
/2
50pF 0.3V
5V±0.5V
V
CC
≤3ns
V
CC
/2
50pF 0.3V
Voltage Waveform Pulse Duration
Voltage Waveform Enable and Disable Times
Low and High Level Enabling
Voltage Waveform Propagation Delay Times
Inverting and Non Inverting Outputs
Figure 1. Load Circuit and Voltage Waveforms
Notes: A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate ≤ 1 MHz.
C. Inputs are measured separately one transition per measurement.
D. t
PLZ
and t
PHZ
are the same as t
dis.
E. t
PZL
and t
PZH
are the same as t
EN.
F. t
PLH
and t
PHL
are the same as t
PD.
P1-P3P4-P6P7-P9

74AHC1G126W5-7

Mfr. #:
Buy 74AHC1G126W5-7
Manufacturer:
Diodes Incorporated
Description:
Buffers & Line Drivers SINGLE BUFFER GATE 3-STATE 2.0V to 5.5V
Lifecycle:
New from this manufacturer.
Delivery:
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