SUP75N03-04-E3 Datasheet SUP75N03-04-E3 | P1-P3

Vishay Siliconix

SUP/SUB75N03-04

Document Number: 70745

S-62484-Rev. F, 04-Dec-06

www.vishay.com

1

N-Channel 30-V (D-S), 175 °C MOSFET

FEATURES

• TrenchFET

®

Power MOSFETs

• 175 °C Rated Maximum Junction

Temperature

PRODUCT SUMMARY

V

(BR)DSS

(V) r

DS(on)

(Ω)I

D

(A)

30 0.004

75

a

TO-220AB

Top View

SUP75N03-04

GD S

DRAIN connected to TAB

TO-263

SG

Top View

DRAIN connected to TAB

D

SUB75N03-04

Ordering Information: SUP75N03-04

SUP75N03-04-E3 (Lead (Pb)-free)

SUB75N03-04

SUB75N03-04-E3 (Lead (Pb)-free)

D

G

S

N-Channel MOSFET

Notes:

a. Package limited.

b. Duty cycle ≤ 1 %.

c. See SOA curve for voltage derating.

d. When Mounted on 1" square PCB (FR-4 material).

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply

ABSOLUTE MAXIMUM RATINGS T

C

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Gate-Source Voltage

V

GS

± 20 V

Continuous Drain Current (T

J

= 175 °C)

T

C

= 25 °C

I

D

75

a

A

T

C

= 125 °C

75

a

Pulsed Drain Current

I

DM

250

Pulse Diode Forward Current

I

SM

250

Continuous Source Current (Diode Conduction)

I

S

75

Avalanche Current

I

AR

75

Avalanche Energy L = 0.1 mH

E

AS

280

mJ

Repetitive Avalanche Energy

b

L = 0.05 mH

E

AR

140

Maximum Power Dissipation

T

C

= 25 °C (TO-220AB and TO-263)

P

D

187

c

W

T

A

= 25 °C (TO-263)

d

3.7

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 175

°C

Lead Temperature (

1

/

16

" from case for 10 sec.)

TO-220AB

T

L

300

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient

PCB Mount (TO-263)

d

R

thJA

40

°C/W

Free Air (TO-220AB) 62.5

Junction-to-Case

R

thJC

0.6

Available

RoHS*

COMPLIANT

www.vishay.com

2

Document Number: 70745

S-62484-Rev. F, 04-Dec-06

Vishay Siliconix

SUP/SUB75N03-04

Notes:

a. For design aid only; not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ

a

Max Unit

Static

Drain-Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= 250 µA

30

V

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

13

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 500 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V

1

µA

V

DS

= 30 V, V

GS

= 0 V, T

J

= 125 °C

50

V

DS

= 30 V, V

GS

= 0 V, T

J

= 175 °C

200

On-State Drain Current

b

I

D(on)

V

DS

= 5 V, V

GS

= 10 V

120 A

Drain-Source On-State Resistance

b

r

DS(on)

V

GS

= 10 V, I

D

= 75 A

0.0034 0.004

Ω

V

GS

= 4.5 V, I

D

= 75 A

0.005 0.006

V

GS

= 10 V, I

D

= 25 A, T

J

= 125 °C

0.006

V

GS

= 10 V, I

D

= 25 A, T

J

= 175 °C

0.008

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 25 A

30 S

Dynamic

Input Capacitance

C

iss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz

10742

pFOutput Capacitance

C

oss

1811

Reverse Transfer Capacitance

C

rss

775

Total Gate Charge

Q

g

V

DS

= 30 V, V

GS

= 10 V, I

D

= 75 A

200 250

nCGate-Source Charge

Q

gs

40

Gate-Drain Charge

Q

gd

40

Tur n -O n D e lay T i m e

t

d(on)

V

DD

= 30 V, R

L

= 0.6 Ω

I

D

≅ 50 A, V

GEN

= 10 V, R

G

= 2.5 Ω

20 40

ns

Rise Time

t

r

40

Turn-Off Delay Time

t

d(off)

190

Fall Time

t

f

95

Source-Drain Diode Ratings and Characteristics

Diode Forward Voltage

b

V

SD

I

F

= 75 A, V

GS

= 0 V

1.3 V

Reverse Recovery Time

t

rr

I

F

= 50 A, di/dt = 100 A/µs

70 120 ns

Peak Reverse Recovery Current

I

RM(rec)

2.8 6 A

Reverse Recovery Charge

Q

rr

0.1 0.36 µC

Document Number: 70745

S-62484-Rev. F, 04-Dec-06

www.vishay.com

3

Vishay Siliconix

SUP/SUB75N03-04

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

Transconductance

Capacitance

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0

50

100

150

200

250

0246810

V

GS

= 10, 9, 8, 7, 6, 5 V

4 V

3 V

V

GS

- Gate-to-Source Voltage (V)

- Transconductance (S)g

fs

0

25

50

75

100

125

150

175

0 20406080100

T

C

= - 55 °C

25 °C

125 °C

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0

2000

4000

6000

8000

10000

12000

14000

0 6 12 18 24 30

C

iss

C

oss

C

rss

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

50

100

150

200

012345

25 °C

- 55 °C

T

C

= 125 °C

- On-Resistance (Ω)

I

D

- Drain Current (A)

r

DS(on)

0.000

0.002

0.004

0.006

0.008

0 20 40 60 80 100 120

V

GS

= 10 V

V

GS

= 4.5 V

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0

4

8

12

16

20

0 100 200 300 400

V

DS

= 30 V

I

D

= 75 A

SUP75N03-04-E3

SUP75N03-04-E3

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