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VS-ETU1506S-M3

P1-P3P4-P6P7-P9P10-P12P13-P13
VS-ETU1506S-M3, VS-ETU1506-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
1
Document Number: 96334
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra Fast Rectifier, 15 A FRED Pt
®
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to JEDEC
®
-JESD 47
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
State of the art, ultralow V
F
, soft-switching ultrafast rectifiers
optimized for discontinuous (critical) mode (DCM) power
factor correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
1.1 V
t
rr
(typ.) 24 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Single
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
N/C
Anode
1
3
2
Anode
1
3
Base
cathode
2
N/C
VS-ETU1506S-M3 VS-ETU1506-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 143 °C 15
A
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 160
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 1.35 1.9
I
F
= 15 A, T
J
= 150 °C - 1.1 1.3
Reverse leakage current I
R
V
R
= V
R
rated - 0.01 15
μA
T
J
= 150 °C, V
R
= V
R
rated - 20 200
Junction capacitance C
T
V
R
= 600 V - 12 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-ETU1506S-M3, VS-ETU1506-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
2
Document Number: 96334
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 24 28
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 36 47
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-40-
T
J
= 125 °C - 87 -
Peak recovery current I
RRM
T
J
= 25 °C - 5 -
A
T
J
= 125 °C - 9.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 107 -
C
T
J
= 125 °C - 430 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
-53-ns
Peak recovery current I
RRM
-25- A
Reverse recovery charge Q
rr
-730- nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction-to-case
R
thJC
- 1.3 1.51 °C/W
Thermal resistance,
junction-to-ambient
R
thJA
Typical socket mount - - 70
Thermal resistance,
case-to-heat sink
R
thCS
Mounting surface, flat, smooth, and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK (TO-263AB) ETU1506S
Case style TO-262 ETU1506-1
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.5 1.0 1.5 2.0 2.5
1
10
100
T
J
= 25 °C
T
J
= 150 °C
T
J
= 175 °C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
0 100 200 300 400 500 600
0.0001
0.001
0.01
0.1
1
10
100
1000
150 °C
175 °C
25 °C
50 °C
75 °C
125 °C
100 °C
VS-ETU1506S-M3, VS-ETU1506-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
3
Document Number: 96334
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
0 100 200 300 400 500 600
1
10
100
1000
V
R
-
Reverse Voltage (V)
C
T
-
Junction Capacitance (pF)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
1
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
Single Pulse
(Thermal Resistance)
D = 0.01
0.01
0.1
10
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0 5 10 15 20 25
120
130
140
150
160
170
180
DC
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
0 5 10 15 20 25
0
5
10
15
20
25
30
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
P1-P3P4-P6P7-P9P10-P12P13-P13

VS-ETU1506S-M3

Mfr. #:
Buy VS-ETU1506S-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 15A 600V Ultrafast 40ns
Lifecycle:
New from this manufacturer.
Delivery:
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