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2SC4703-T1-AZ

P1-P3P4-P6P7-P7
NPN SILICON RF TRANSISTOR
NE46234 / 2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
3-PIN POWER MINIMOLD
The mark shows major revised points.
Document No. PU10339EJ01V1DS (1st edition)
Date Published May 2003 CP(K)
DESCRIPTION
The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
(VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It
employs surface mount type plastic package, power mini mold (SOT-89).
FEATURES
• Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dB
V/75
• Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm
2
0.7 mm (t) ceramic substrate)
• Small package : 3-pin power mini mold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE46234-AZ
2SC4703
25 pcs (Non reel)
• 12 mm wide embossed taping
NE46234-T1-AZ
2SC4703-T1
1 kpcs/reel
• Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Unit
Collector to Base Voltage
VCBO
V
Collector to Emitter Voltage
VCEO
V
Emitter to Base Voltage
VEBO
V
Collector Current
IC
mA
Total Power Dissipation
Ptot
Note
W
Junction Temperature
Tj
C
Storage Temperature
Tstg
C
Note Mounted on double-sided copper-clad 16 cm
2
0.7 mm (t) ceramic substrate
Data Sheet PU10339EJ01V1DS
2
NE46234 / 2SC4703
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 mA
–
–
1.5
A
Emitter Cut-off Current
IEBO
VEB = 2 V, IC = 0 mA
–
–
1.5
A
DC Current Gain
hFE
Note 1
VCE = 5 V, IC = 50 mA
50
–
250
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 5 V, IC = 50 mA
–
6.0
–
GHz
Insertion Power Gain (1)
S21e
2
VCE = 5 V, IC = 50 mA, f = 1 GHz
6.5
8.3
–
dB
Insertion Power Gain (2)
S21e
2
VCE = 10 V, IC = 20 mA, f = 1 GHz
–
8.5
–
dB
Noise Figure
NF
VCE = 5 V, IC = 50 mA, f = 1 GHz
–
2.3
3.5
dB
Collector Capacitance
Cob
Note 2
VCB = 5 V, IE = 0 mA, f = 1 MHz
–
1.5
2.5
pF
2nd Order Intermoduration Distortion
IM2
IC = 50 mA,
VO = 105 dB
V/75 ,
f = 190 90 MHz
VCE = 5 V
–
55
–
dBc
VCE = 10 V
63
–
3rd Order Intermoduration Distortion
IM3
IC = 50 mA,
VO = 105 dB
V/75 ,
f = 2 190 200 MHz
VCE = 5 V
–
76
–
dBc
VCE = 10 V
–
81
–
Notes 1. Pulse measurement: PW 350
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
SH
SF
SE
Marking
SH
SF
SE
hFE Value
50 to 100
80 to 160
125 to 250
Data Sheet PU10339EJ01V1DS
3
NE46234 / 2SC4703
TYPICAL CHARACTERISTICS (TA = +25C)
P1-P3P4-P6P7-P7

2SC4703-T1-AZ

Mfr. #:
Buy 2SC4703-T1-AZ
Manufacturer:
CEL
Description:
RF Bipolar Transistors NPN Silicon 6GHz NF 2.3dB
Lifecycle:
New from this manufacturer.
Delivery:
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