August 2006 Rev 10 1/9
9
USB6B1
Data line protection
Applications
Where transient overvoltage protection in
sensitive equipment is required, such as:
Universal Serial Bus ports
RS-423 interfaces
RS-485 interfaces
ISDN equipment
T1/E1 line cards
HDSL / ASDL interfaces
Features
Full diode bridge with integrated clamping
protection
Breakdown voltage: V
BR
= 6 V min.
Peak pulse power dissipation: P
PP
= 500 W
(8/20 µs)
Very low capacitance, compatible with high
debit data or signal rates.
Description
In order to prevent fast transients from leading to
severe damages in a high speed data system, a
specific protection has been developed by
STMicroelectronics.
The USB6B1 protects the two input lines against
overvoltage. Besides, this device also keeps the
power rails in a safe limit thanks to the integrated
Transil diode.
Benefits
Provides protection for each line and between
the supply voltage and GND: 25 A, 8/20 µs.
High ESD protection level: up to level 3 per MIL
STD 883C-Method 3015-6
Separated inputs and outputs (so-called 4-point
structure) to improve ESD susceptibility.
Comprehensive package pin-out for immediate
implementation.
Order Codes
Functional diagram
Complies with the following standards:
Part Numbers Marking
USB6B1 USB62
USB6B1RL USB62
MIL STD 883C - Method 3015-6
class 3 C = 100 pF R = 1500
3 positive strikes and 3 negative strikes (F = 1 Hz)
IEC 61000-4-2 level 4
15 kV (air discharge)
8 kV (contact discharge)
SO-8
V
CC
V
CC
I/O1I/O1
I/O2I/O2
GNDGND
www.st.com
Characteristics USB6B1
2/9
1 Characteristics
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
IEC61000-4-2 contact discharge
IEC61000-4-2 air discharge
MIL STD883C-Method 30 15-6
8
15
4
kV
P
PP
Peak pulse power 8/20 µs 500 W
I
PP
Peak pulse current
8/20 µs 25
A
2/10 µs 40
T
stg
T
op
Storage temperature range
Operating temperature range
- 55 to + 150
- 40 to + 85
° C
° C
T
L
Lead solder temperature (10 s duration) 260 ° C
Table 2. Electrical characteristics (T
amb
= 25° C)
Symbol Parameter
Value
Unit
Min Typ Max
V
BR
Breakdown voltage between V
BUS
and GND I
R
= 1 mA 6 V
I
RM
Leakage current V
RM
= 5.25 V 10 µA
C
Capacitance between pins D+ and D-
V
OSC
= 30 mV, F = 1 MHz, V
R
= 0 V
V
CC
not connected
15 pF
Capacitance between pins D+(or D-) and GND
V
OSC
= 30 mV, F = 1 MHz, V
R
= 5 V
V
CC
= 5 V 25 pF
USB6B1 Characteristics
3/9
Figure 1. Peak power dissipation versus
initial junction temperature
Figure 2. Relative variation of leakage
current versus junction
temperature (typical values)
Figure 3. Relative variation of breakdown
voltage versus junction temperature
(typical values)
-40 -20 0 20 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
P [T initial]/P [T initial=25°C]
pp j pp j
T initial(°C)
j
I [T ] / I [T =25°C]
Rj Rj
-40 -20 0 20 40 60 80 100 120 140
0.1
1.0
10.0
T (°C)
j
-40 -20 0 20 40 60 80 100 120 140
0.90
0.95
1.00
1.05
1.10
V [T ] / V [T =25°C]
BR j BR j
T (°C)
j

USB6B1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
ESD Suppressors / TVS Diodes unidirect 2line fltr 25pF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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