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M30L40C-E3/4W

P1-P3P4-P4
M30L40C
www.vishay.com
Vishay General Semiconductor
Revision: 15-Aug-15
1
Document Number: 89012
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max., 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
40 V
E
AS
20 mJ
I
FSM
280 A
V
F
at I
F
= 15 A
0.413 V
T
J
max. 150 °C
Package TO-220AB
Diode variations Common cathode
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL M30L40C UNIT
Maximum repetitive peak reverse voltage V
RRM
40 V
Maximum average forward rectified current (fig.1)
total device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
I
FSM
280 A
Peak repetitive reverse current per diode at t
p
= 2 μs, 1 kHz I
RRM
1.0 A
Non-repetitive avalanche energy at 25 °C, I
AS
= 2 A, L = 10 mH per diode E
AS
20 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C
M30L40C
www.vishay.com
Vishay General Semiconductor
Revision: 15-Aug-15
2
Document Number: 89012
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT
Instantaneous forward voltage per diode V
F
(1)
I
F
= 8 A
T
J
= 25 °C
0.430 -
V
I
F
= 15 A 0.490 0.55
I
F
= 30 A 0.595 -
I
F
= 8 A
T
J
= 125 °C
0.331 -
I
F
= 15 A 0.413 0.48
I
F
= 30 A 0.572 -
Reverse current per diode I
R
(2)
V
R
= 40 V
T
J
= 25 °C 88 360 μA
T
J
= 100 °C 12 45 mA
Typical junction capacitance per diode C
J
4.0 V, 1 MHz 750 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL M30L40C UNIT
Typical thermal resistance per diode R
JC
2.0 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
M30L40C-E3/4W 2.068 4W 50/tube Tube
Average Forward Current (A)
Case Temperature (°C)
30
35
25
20
15
10
5
0
0 25 50 75 100 125 150
Resistive or Inductive Load
0
024681012141618
1
2
3
4
5
6
7
8
9
Average Power Loss (W)
Average Forward Current (A)
D = 0.2
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
M30L40C
www.vishay.com
Vishay General Semiconductor
Revision: 15-Aug-15
3
Document Number: 89012
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
100
0 0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0.01
0.1
1
100
1000
10
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
1
3
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
P1-P3P4-P4

M30L40C-E3/4W

Mfr. #:
Buy M30L40C-E3/4W
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 40 Volt 30 Amp Dual Common-Cathode
Lifecycle:
New from this manufacturer.
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