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DPG30C400PB

P1-P3P4-P5
DPG30C400PB
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
1 2
3
Part number
DPG30C400PB
Backside: cathode
FAV
rr
tns45
RRM
15
400
=
V= V
I= A
2x
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30C400PB
n
s
4
A
T
VJ
=°C
reverse recovery time
A
5.5
45
70
n
s
I
RM
max. reverse recovery current
I
F
=A;15
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V270
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.39
R 1.7 K/
W
R
min.
15
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.18V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
140
P
tot
90
W
T = 25°C
C
R K/
W
15
400
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Uni
t
1.63
T = 25°C
VJ
150
V
F0
V
0.84T = °C
VJ
175
r
F
16.5
m
V
1.14T = °C
VJ
I = A
F
V
15
1.40
I = A
F
30
I = A
F
30
threshold voltage
slope resistance
for power loss calculation only
µ
A
150
V
RRM
V
400
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
16
j
unction capacitance
V = V200 T = 25°Cf = 1 MHz
R
VJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
190
A
400
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
400
0.50
IXYS reserves the right to change limits, conditions and dimensions.
20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30C400PB
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
D
P
G
30
C
400
PB
Part number
Diode
HiPerFRED
extreme fast
Common Cathode
TO-220AB (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque
0.4
T
VJ
°C175
virtual junction temperature
-55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
150-55
TO-220
Similar Part Package Voltage class
DPG30C400HB TO-247AD (3) 400
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DPG30C400PB 507157Tube 50DPG30C400PBStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V0.84
mΩ
V
0 max
R
0 max
slope resistance *
13.3
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions.
20131101aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
P1-P3P4-P5

DPG30C400PB

Mfr. #:
Buy DPG30C400PB
Manufacturer:
Littelfuse
Description:
Diodes - General Purpose, Power, Switching HIPERFRED 2ND GEN FAST DIODES 400V 30A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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