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IXDN75N120
P1-P3
P4-P4
© 2000 IXYS All rights reserved
4 - 4
Fig. 5
Typ. turn on energy and switching
Fig. 6
Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 7
Typ. turn on energy and switching
Fig.8
Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 9
Reverse bi
ased safe operating area
Fig. 10
Typ. transient thermal impedance
RBSOA
0
50
100
150
0
10
20
30
40
0
40
80
120
160
0
50
100
150
0
5
10
15
20
0
200
400
600
800
0.0000
1
0.
0001
0.001
0.0
1
0.
1
1
0.00
001
0.0001
0.001
0.01
0.1
1
0
8
16
24
32
40
48
56
0
5
10
15
20
25
0
400
800
1200
1600
2000
0
8
16
24
32
40
48
56
0
5
10
15
20
25
0
40
80
120
160
200
single
pulse
V
CE
= 60
0V
V
GE
= ±15V
R
G
= 15
T
J
= 125
°
C
IXDN75N120
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125
°
C
0
200
400
600
80
0
1000
1200
0
50
100
150
200
R
G
= 15
T
J
= 125
°
C
V
CEK
< V
CES
V
CE
= 60
0V
V
GE
= ±15V
R
G
= 15
T
J
= 125
°
C
E
on
V
CE
= 600V
V
GE
= ±1
5V
I
C
= 75A
T
J
= 125
°
C
t
d(on)
t
r
E
off
t
d(off
)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
V
A
IXDN 75N120
P1-P3
P4-P4
IXDN75N120
Mfr. #:
Buy IXDN75N120
Manufacturer:
Littelfuse
Description:
IGBT Transistors 75 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
Payment:
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IXDN75N120