APT2X101S20J

PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular SOT-227 Package
Rugged -
Avalanche Energy Rated
Low Forward Voltage
High Blocking Voltage
Low Leakage Current
PRODUCT APPLICATIONS
Rectifiers in Switchmode Power
Supplies (SMPS)
Free Wheeling Diode in
Low Voltage Converters
HIGH VOLTAGE SCHOTTKY DIODE
053-6023 Rev C 7-2006
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
APT2X101S20J
APT2X101S20J 200V 120A
Symbol
V
F
I
RM
C
T
UNIT
Volts
mA
pF
MIN TYP MAX
.89 .95
1.06
.76
2
40
470
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 100A
I
F
= 200A
I
F
= 100A, T
J
= 125°C
V
R
= 200V
V
R
= 200V, T
J
= 125°C
DUAL DIE ISOTOP
®
PACKAGE
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 105°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Operating and StorageTemperature Range
Avalanche Energy (2A, 50mH)
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
T
J
,T
STG
E
AVL
UNIT
Volts
Amps
°C
mJ
APT2X101S20J
200
120
213
1000
-55 to 150
100
SOT-227
ISOTOP
1
2
3
4
file # E145592
"UL Recognized"
Parallel
2
1
3
4
Microsemi Website - http://www.microsemi.com
APT2X101S20J
053-6023 Rev C 7-2006
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
MIN TYP MAX
- 70
- 240
-6-
- 110
- 690
-11-
-95
- 1750
-32
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 100A, di
F
/dt = -200A/µs
V
R
= 133V, T
C
= 25°C
I
F
= 100A, di
F
/dt = -200A/µs
V
R
= 133V, T
C
= 125°C
I
F
= 100A, di
F
/dt = -700A/µs
V
R
= 133V, T
C
= 125°C
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0 10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Note:
Duty Factor D =
t
1
/
t
2
Peak T
J
= P
DM
x Z
θJC
+ T
C
t
1
t
2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
D = 0.9
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Terminal & Mounting Torque
Symbol
R
θJC
V
Isolation
W
T
Torque
MIN TYP MAX
.33
2500
1.03
29.2
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
0.0673 0.188 0.0743
0.0182 0.361 5.17
Dissipated Power
(Watts)
T
J
(C) T
C
(C)
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
053-6023 Rev C 7-2006
APT2X101S20J
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
R
= 133V
50A
100A
130A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
130A
100A
50A
0 0.5 1.0 1.5 0 200 400 600 800
0 200 400 600 800 0 200 400 600 800
360
300
240
180
120
60
0
2500
2000
1500
1000
500
0
T
J
= 125°C
V
R
= 133V
100A
50A
130A
T
J
= 125°C
V
R
= 133V
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs) -di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V) Time in Avalanche (µs)
Figure 8. Junction Capacitance vs. Reverse Voltage Figure 9. Single Pulse UIS SOA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6000
5000
4000
3000
2000
1000
0
0 25 50 75 100 125 150 25 50 75 100 125 150
1 10 100 200 1 10 100 1000 2500
250
200
150
100
50
0
200
100
50
10
5
1
Duty cycle = 0.5
T
J
= 150°C
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 700A/µs)
PEAK AVALANCHE CURRENT I
F(AV)
(A)
(A)

APT2X101S20J

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Schottky Diodes & Rectifiers FG, SCHOTTKY, 200V, 100A, SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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