2SA2092TLQ Datasheet 2SA2092TLQ, 2SA2092TLR | P1-P3

1/3

www.rohm.com

○

c

2011.03 - Rev.

A

1A / 60V Bipolar transistor

2SA2092

Features Dimensions (Unit : mm)

1) High speed switching. (tf : Typ. : 30ns at IC = 1A)

2) Low saturation voltage.

(Typ. :



200mV

at IC =



500mA, IB =



50mA)

3) Strong discharge resistance for inductive load and

capacitance load.

4) Low switching noise.

Applications

High-speed switching, low frequency amplification

Structure

PNP epitaxial planar silicon transistor

Packaging specifications

Taping

2SA2092

Part No.

TL

3000

Packaging type

TSMT3Package

Basic ordering unit (pieces)

Code

Absolute maximum ratings (Ta=25C)

Parameter

V

A

mW

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land

∗

2

∗

1

°C

A

°C

V

CBO

V

CEO

I

C

P

C

Tj

V

EBO

I

CP

Tstg

Symbol

−60

−6

−1

−2

500

150

−55 to +150

Limits Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

PULSE

Power dissipation

Junction temperature

Range of storage temperature

Each lead has same dimensions

Abbreviated symbol : VN

TSMT3

(1) Base

(2) Emitter

(3) Collector

0

~

0.1

0.16

0.85

1.0MAX

0.7

0.3

~

0.6

(

2

)

(

1

)

(

3

)

2.9

2.8

1.9

1.6

0.950.95

0.4

2/3

www.rohm.com

○

c

2011.03 - Rev.

A

Data Sheet 2SA2092

Electrical characteristics (Ta=25C)

Parameter Symbol

BV

EBO

I

CBO

I

EBO

V

CE(sat)

f

T

h

FE

Cob

ton

Min.

−6

−

120

−

300

−−

15

30

−

−1.0

−

−200

−500

270

−

I

E

= −100μA

V

CE

= −2V, I

C

= −100mA

V

CB

= −40V

V

EB

= −4V

I

C

= −500mA, I

B

= −50mA

I

C

= −1A,

I

B1

= −100mA

I

B2

=100mA

V

CC

−25V

V

CE

= −10V, I

E

=100mA, f=10MHz

V

CB

= −10V, I

E

=0, f=1MHz

V

μA

MHz

mV

pF

ns

tstg

−

100

−

ns

tf

−

30

−

ns

Typ. Max.

Unit

Conditions

BV

CEO

−60

−−

V

I

C

= −100μA

Collector-emitter breakdown voltage

Collector cut-off current

DC current gain

Transition frequency

Collector output capacitance

Turn-on time

Storage time

Fall time

Emitter cut-off current

Collector-emitter saturation voltage

BV

CBO

−60 −−

I

C

= −1mA

V

Collector-base breakdown voltage

Emitter-base breakdown voltage

∗2

∗3

∗1

∗1 Pulse measurement

∗2 See switching test circuit

∗3 h

FE

rank

∼

−

h

FE RANK

Q

120-270

Electrical characteristic curves

10

COLLECTOR CURRENT : I

C

(A)

BASE TO EMITTER VOLTAGE : V

EB

(V)

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

1

0.01

0.1

Fig.1 Grounded emitter propagatio

n

characteristics

V

CE

=2V

125

°C

25

°C

−40

°C

Fig.2 Typical output characteristics

COLLECTOR TO EMITTER VOLTAGE : V

CE

(

V)

COLLECTOR CURRENT : I

C

(mA)

200

160

120

80

40

0

IB=0μA

100μA

200μA

300μA

400μA

500μA

600μA

700μA

800μA

1000μA

900μA

012345

Fig.3 DC current gain vs. collecto

r

current ( Ι )

COLLECTOR CURRENT : IC (A)

DC CURRENT GAIN : hFE

0.001 0.01 0.1 101

1

10

100

1000

125°C

25°C

−40°C

VCE=2V

0.001 0.01 0.1 1

0

1

10

100

1000

COLLECTOR CURRENT : IC (A)

DC CURRENT GAIN : hFE

V

CE

=5V

V

CE

=3V

V

CE

=2V

Fig.4 DC current gain vs. collector

current (ΙΙ)

Ta=25°C

0.001 0.01 0.1

0.01

0.1

1

10

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat)(V)

COLLECTOR CURRENT : I

C

(A)

101

Fig.5 Collector-emitter saturation voltag

e

vs. collector current ( Ι )

I

C

/I

B

=10/1

125°C

25°C

−40°C

0.001 0.10.01 101

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

COLLECTOR SATURATION

VOLTAGE : V

CE (sat)(V)

F

ig.6 Collector-emitter saturation voltag

e

vs. collector current (ΙΙ)

I

C

/I

B

=10/1

I

C

/I

B

=20/1

Ta=25°C

3/3

www.rohm.com

○

c

2011.03 - Rev.

A

Data Sheet 2SA2092

COLLECTOR CURRENT : I

C

(A)

BASE EMITTER SATURATION

VOLTAGE : V

BE(sat) (V)

Fig.7 Base-emitter saturation voltag

e

vs. collector current

0.001 0.01 0.1 101

1

0.01

0.1

10

125°C

I

C

/I

B

=10/1

25°C

−40°C

1000

TRANSITION FREQUENCY : F

T

(MHz)

EMITTER CURRENT : I

E

(A)

1

0

10.10.010.001

100

10

1

Fig.8 Transition frequency

Ta=25°C

V

CE

=10V

1

10

1000

100

COLLECOTR OUTPUT CAPACITACNE : Cob

(p

F)

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR TO BASE VOLTAGE : V

CE

(V)

EMITTER TO BASE VOLTAGE : V

BE

(V)

0.1 1 10 10

0

Fig.9 Collector output capacitanc

e

Emitter input capacitance

Cib

Ta=25°C

f=1MHz

Cob

Fig.10 Switching Time

1

0.01 0.1

1

0

1000

100

10

COLLECTOR CURRENT : I

C

(A)

SWITCHING TIME : SW (ns)

Ta=25°C

V

CC

= −25V

I

C

/I

B

= −I

C

/I

B2

=10

tstg

tf

ton

Switching characteristics measurement circuits

PWVIN

RL=25Ω

I

C

IB1

IB2

PW 50μs

DUTY CYCLE 1%

VCC −25

V

Ton Tstg Tf

I

C

IB2

IB1

10%

90%

B

ase current waveform

C

ollector current waveform

2SA2092TLQ

2SA2092TLQ

Products related to this Datasheet