Characteristics ACST10
4/13 Doc ID 15237 Rev 3
Figure 6. On-state characteristics
(maximal values)
Figure 7. Non repetitive surge peak on-state
current vs. number of cycles
(T
j
initial = 25 °C)
I (A)
TM
1
10
100
012345
I
TM
(A)
T
j
=25 °C
T
j
=125 °C
T
j
max :
V
to
= 0.90 V
R
d
= 35 mΩ
V
TM
(V)
I
A
TSM
0
10
20
30
40
50
60
70
80
90
100
110
1 10 100
Non repetitive
T
j
initial=25 °C
One cycle
t=20ms
Repetitive
T
C
=105 °C
Number of cycles
Figure 8. Non repetitive surge peak on-state
current for a sinusoidal pulse and
corresponding value of I²t
Figure 9. Relative variation of gate triggering
current (I
GT
) and gate triggering
voltage vs. junction temperature
I (A), I t (A s)
TSM
22
1
10
100
1000
10000
0.01 0.10 1.00 10.00
T
j
initial=25 °C
dI/dt limitation: 100 A/µs
I
TSM
I²t
t (ms)
p
I , V ,[T /I [T = 25 °C]
GT
GT
jGT j
T (°C)
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
IQ3
GT
I Q1-Q2
GT
V Q1-Q2-Q3
GT
Figure 10. Relative variation of holding (I
H
)
and latching current (I
L
) vs.
junction temperature
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c
vs. (dV/dt)c
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125
I ,I [T ]/I ,I [T = 25 °C]
HL J HL
j
I
L
T (°C)
J
I
H
Typical values
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 1 10 100
(di/dt)c [(dV/dt)c] / Specified (di/dt)c
(dV/dt)c (V/µs)
ACST10-7Cxx
ACST10-7Sxx
