2SA1862
Transistors
High-voltage Switching Transistor
(
−
400V,
−
2A)
2SA1862
!
!!
!
Features
1) High breakdown voltage. (BV
CEO
=
−
400V)
2) Low saturation voltage.
(Typ. V
CE
(sat)
=
−
0.3V at I
C
/ I
B
=
−
500mA /
−
100mA)
3) High switching speed, typically tf = 0.4
µ
s at I
C
=
−
1A.
4) Wide SOA (safe operating area).
!
!!
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter Symbol
V
CBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−400
−400
−7
−2
1
10
150
−55~+150
Unit
V
V
V
A (DC)
−4 A (Pulse)
*
W
W (Tc = 25
˚C)
˚C
˚C
*
Single pulse, Pw = 10ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
!!
!
External dimensions
(Units : mm)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.5
0.65
0.9
(
1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
5.1
!
!!
!
Packaging specifications and h
FE
Type 2SA1862
CPT3
P
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
!
!!
!
Electrical characteristics
(Ta = 25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
−400
−400
−7
−
−
−
82
−
−
−
−
−
−
−
−0.3
−
18
30
−
−
−
−10
−10
−0.5
180
−
−
V
V
V
µA
µA
V
−
MHz
pF
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −400V
V
EB
= −5V
I
C
/I
B
= −0.5A / −0.1A
V
CE(sat)
−−−1.2 V I
C
/I
B
= −0.5A / −0.1A
V
CE
= −5V, I
C
= −0.1A
V
CB
= −10V, I
E
= 0.1A, f = 5MHz
V
CE
= −10V, I
E
= 0A, f = 1MHz
ton − 0.2 −µsI
C
= −1A, R
L
= 150Ω
tstg − 1.8 −µsI
B1
= −I
B2
= −0.2A
tf − 0.4 −µs
V
CC
150V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
