BCM857BV
Datasheet number: DS37433 Rev. 3 - 2
March 2015
© Diodes Incorporated
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Collector-Emitter Voltage
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Power Dissipation. Total Device (Note 6)
Power Dissipation. Single Transistor (Note 7)
Thermal Resistance, Junction to Ambient Air (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 7)
Operating and Storage Temperature Range
ESD Ratings (Note 8)
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
CE
= -5.0V, I
C
= -2.0mA
DC Current Gain Matching (Note 10)
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -0.5mA
V
CE
= -5.0V, I
C
= -2.0mA
Base-Emitter Voltage Matching (Note 11)
V
CE
= -5.0V, I
C
= -2.0mA
Collector Cut-Off Current
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance
Notes: 6. For a device with two active die running at equal power, mounted on minimum recommended pad layout with 1oz copper that is on a single-sided
1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state.
7. Same as Note 6 except for only one active die running.
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
9. Short duration pulse test used to minimize self-heating effect.
10. The smaller of the two values is taken as the numerator.
11. The smaller of the two values is subtracted from the larger value.