BCM857BV-7

BCM857BV
Datasheet number: DS37433 Rev. 3 - 2
1 of 5
www.diodes.com
March 2015
© Diodes Incorporated
BCM857BV
NEW PROD UCT
45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563
Features
BV
CEO
> -45V
I
C
= -100mA High Collector Current
Pair of PNP Transistors That Are Intrinsically Matched (Note 1)
2% Matching on Current Gain (h
FE
)
2mV Matching on Base-Emitter Voltage (V
BE
)
Fully Internally Isolated in a Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)
Halogen and Antimony Free. "Green" Device (Note 4)
Qualified to AEC-Q101 for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.003 grams (Approximate)
Ordering Information (Note 5)
Compliance
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
AEC-Q101
1U5
7
8
3,000
Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer.
2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
Code
B
C
D
E
F
G
H
I
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Device Symbol
1U5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Top View
Top View
Pin-Out
C2
E2
B2
C1
E1
B1
SOT563
SOT563
e3
BCM857BV
Datasheet number: DS37433 Rev. 3 - 2
2 of 5
www.diodes.com
March 2015
© Diodes Incorporated
BCM857BV
NEW PROD UCT
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-100
mA
Peak Collector Current
I
CM
-200
mA
Peak Base Current
I
BM
-200
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation. Total Device (Note 6)
P
D
500
mW
Power Dissipation. Single Transistor (Note 7)
P
D
357
mW
Thermal Resistance, Junction to Ambient Air (Note 6)
R
θJA
+250
°C/W
Thermal Resistance, Junction to Ambient Air (Note 7)
R
θJA
+350
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 9)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
V
I
C
= 100µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-45
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-5
V
I
E
= 100µA, I
C
= 0
DC Current Gain
h
FE
200
290
450
V
CE
= -5.0V, I
C
= -2.0mA
DC Current Gain Matching (Note 10)
h
FE1/
h
FE2
0.98
1
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-50
-200
-200
-400
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
-760
mV
I
C
= -10mA, I
B
= -0.5mA
Base-Emitter Voltage
V
BE(on)
-600
-650
-700
mV
V
CE
= -5.0V, I
C
= -2.0mA
Base-Emitter Voltage Matching (Note 11)
V
BE1(on) -
V
BE2(on)
2
mV
V
CE
= -5.0V, I
C
= -2.0mA
Collector Cut-Off Current
I
CBO
-15
-5.0
nA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
= -5.0V, I
C
= 0
Gain Bandwidth Product
f
T
100
175
MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
2.2
pF
V
CB
= -10V, f = 1.0MHz
Emitter-Base Capacitance
C
EBO
10
pF
V
EB
= -0.5V, f = 1.0MHz
Notes: 6. For a device with two active die running at equal power, mounted on minimum recommended pad layout with 1oz copper that is on a single-sided
1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state.
7. Same as Note 6 except for only one active die running.
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
9. Short duration pulse test used to minimize self-heating effect.
10. The smaller of the two values is taken as the numerator.
11. The smaller of the two values is subtracted from the larger value.
BCM857BV
Datasheet number: DS37433 Rev. 3 - 2
3 of 5
www.diodes.com
March 2015
© Diodes Incorporated
BCM857BV
NEW PROD UCT
1
10
100
1,000
10
100
1
h DC CURRENT GAIN
FE,
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
Typical Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
0
0.1
0.2
0.3
0.4
0.5
0.1
1 10
100 1,000
V , COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
CE
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
10
100
1,000
1 10 100
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current
C
TEMPERATURE (°C)
Derating Curve
MAX POWER DISSIPATION (W)
See Note 6
See Note 7
I
C
, COLLECTOR CURRENT (mA)
Typical DC Current Gain vs. Collector Current
I
C
, COLLECTOR CURRENT (mA)
Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (mA)
Typical Gain-Bandwidth Product vs. Collector Current

BCM857BV-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 45V Matched Pair PNP SS Trans -100mA
Lifecycle:
New from this manufacturer.
Delivery:
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