NP90N03VHG-E1-AY Datasheet NP90N03VHG-E1-AY | P1-P3

R07DS0128EJ0100 Rev.1.00 Page 1 of 6

Sep 24, 2010

Preliminary Data Sheet

NP90N03VHG

MOS FIELD EFFECT TRANSISTOR

Description

The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Low on-state resistance

⎯ R

DS(on)

= 3.2 mΩ MAX. (V

GS

= 10 V, I

D

= 45 A)

• Low input capacitance

⎯ Ciss = 5000 pF TYP. (V

DS

= 25 V, V

GS

= 0 V)

• Designed for automotive application and AEC-Q101 qualified

Ordering Information

Part No. LEAD PLATING PACKING Package

NP90N03VHG-E1-AY

∗

1

TO-252, Taping (E1 type)

NP90N03VHG-E2-AY

∗

1

Pure Sn (Tin) Tape 2500 p/reel

TO-252, Taping (E2 type)

Note:

∗

1. Pb-free (This product does not contain Pb in the external electrode.)

Absolute Maximum Ratings (T

A

= 25°C)

Item Symbol Ratings Unit

Drain to Source Voltage (V

GS

= 0 V) V

DSS

30 V

Gate to Source Voltage (V

DS

= 0 V) V

GSS

±20 V

Drain Current (DC) (T

C

= 25°C) I

D(DC)

±90 A

Drain Current (pulse)

∗

1

I

D(pulse)

±360 A

Total Power Dissipation (T

C

= 25°C) P

T1

105 W

Total Power Dissipation (T

A

= 25°C) P

T2

1.2 W

Channel Temperature T

ch

175 °C

Storage Temperature T

stg

−55 to +175 °C

Repetitive Avalanche Current

∗

2

I

AR

41 A

Repetitive Avalanche Energy

∗

2

E

AR

168 mJ

Notes:

∗

1. T

C

= 25°C, PW ≤ 10

μ

s, Duty Cycle ≤ 1%

∗

2. T

ch(peak)

≤ 150°C, R

G

= 25 Ω

Thermal Resistance

Channel to Case Thermal Resistance R

th(ch-C)

1.43 °C/W

Channel to Ambient Thermal Resistance R

th(ch-A)

125 °C/W

R07DS0128EJ0100

Rev.1.00

Sep 24, 2010

NP90N03VHG Chapter Title

R07DS0128EJ0100 Rev.1.00 Page 2 of 6

Sep 24, 2010

Electrical Characteristics (T

A

= 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Zero Gate Voltage Drain Current I

DSS

1

μ

A V

DS

= 30 V, V

GS

= 0 V

Gate Leakage Current I

GSS

±10

μ

A V

GS

= ±20 V, V

DS

= 0 V

Gate to Source Threshold Voltage

V

GS(th)

2.0 3.0 4.0 V V

DS

= V

GS

, ID = 250

μ

A

Forward Transfer Admittance

∗

1

| y

fs

| 25 55 S V

DS

= 5 V, I

D

= 45 A

Drain to Source On-state

Resistance

∗

1

R

DS(on)

2.5 3.2 mΩ V

GS

= 10 V, I

D

= 45 A

Input Capacitance C

iss

5000 7500 pF V

DS

= 25 V,

Output Capacitance C

oss

600 900 pF V

GS

= 0 V,

Reverse Transfer Capacitance C

rss

420 760 pF f = 1 MHz

Turn-on Delay Time t

d(on)

32 64 ns V

DD

= 15 V, I

D

= 45 A,

Rise Time t

r

20 49 ns V

GS

= 10 V,

Turn-off Delay Time t

d(off)

64 128 ns R

G

= 0 Ω

Fall Time t

f

13 30 ns

Total Gate Charge Q

G

90 135 nC

Gate to Source Charge Q

GS

24 nC

Gate to Drain Charge Q

GD

31 nC

V

DD

= 24 V,

V

GS

= 10 V,

I

D

= 90 A

Body Diode Forward Voltage

∗

1

V

F(S-D)

0.9 1.5 V I

F

= 90 A, V

GS

= 0 V

Reverse Recovery Time t

rr

43 ns

Reverse Recovery Charge Q

rr

46 nC

I

F

= 90 A, V

GS

= 0 V,

di/dt = 100 A/

μ

s

Note:

∗

1. Pulsed

TEST CIRCUIT 3 GATE CHARGE

V

GS

= 20 → 0 V

PG.

R

G

= 25 Ω

50 Ω

D.U.T.

L

V

DD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

R

G

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

I

D

V

DD

I

AS

V

DS

BV

DSS

Starting T

ch

V

GS

0

= 1 s

Duty Cycle ≤ 1%

τ

μ

τ

V

GS

Wave Form

V

DS

Wave Form

V

GS

V

DS

10%

0

90%

V

GS

V

DS

t

on

t

off

t

d(on)

t

r

t

d(off)

t

f

10% 10%

NP90N03VHG Chapter Title

R07DS0128EJ0100 Rev.1.00 Page 3 of 6

Sep 24, 2010

Typical Characteristics (T

A

= 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE

OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

dT - Percentage of Rated Power - %

0

20

40

60

80

100

120

0 25 50 75 100 125 150 175

T

C

- Case Temperature - °C

P

T

- Total Power Dissipation - W

0

25

50

75

100

125

0 25 50 75 100 125 150 175

T

C

- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

I

D

- Drain Current - A

0.1

1

10

100

1000

0.1 1 10 100

I

D(DC)

I

D(pulse)

10 ms

1 ms

DC

T

C

= 2 5

°

C

Sing le Puls

e

P

W

=

1

i

0

μ

s

S

e

c

o

n

d

a

r

y

B

r

e

a

k

d

o

w

n

L

i

m

i

t

e

d

P

o

w

e

r

D

i

s

i

p

a

t

i

o

n

L

i

m

i

t

e

d

R

D

S

(

o

n

)

L

i

m

i

t

e

d

(

V

G

S

=

1

i

0

V

)

V

DS

- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

th(t)

- Transient Thermal Resistance - °C/W

0.01

0.1

1

10

100

1000

Single Pulse

R

th(ch-A)

= 125

°

C/

W

R

th(ch-C)

= 1.43

°

C/

W

PW - Pulse Width - s

100

μ

1 m 10 m 100 m 1 10 100 1000

NP90N03VHG-E1-AY

NP90N03VHG-E1-AY

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