BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD241 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100 Ω,
V
BE(off)
= 0, R
S
= 0.1 Ω, V
CC
= -20 V.
TINUEULAVLOBMYSGNITAR
Collector-emitter volta
ge (R
BE
= 100 Ω)
BD242
BD242A
BD242B
BD242C
V
CER
-55
-70
-90
-115
V
Collector-emitter voltage (I
C
= -30 mA)
BD242
BD242A
BD242B
BD242C
V
CEO
-45
-60
-80
-100
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-3 A
I)1 etoN ees( tnerruc rotcelloc kaeP
CM
-5 A
Continuous base current I
B
-1 A
Continuous device dissipation at (or below) 25°C P)2 etoN ees( erutarepmet esac
tot
40 W
P)3 etoN ees( erutarepmet ria eerf C°52 )woleb ro( ta noitapissid ecived suounitnoC
tot
2 W
IL½)4 etoN ees( ygrene daol evitcudni depmalcnU
C
2
32 mJ
Tegnar erutarepmet noitcnuj gnitarepO
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Tsdnoces 01 rof esac morf mm 2.3 erutarepmet daeL
L
250 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
