© 2007 IXYS All rights reserved
3 - 5
20071113a
MUBW30-12A6K
IXYS reserves the right to change limits, test conditions and dimensions.
Brake Chopper T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
19
13
A
A
P
tot
total power dissipation
T
C
= 25°C 90 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 15 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
2.9
3.5
3.4 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 0.4 mA; V
GE
= V
CE
T
VJ
= 25°C 4.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 0.8
0.5 mA
mA
I
GES
gate emitter leakage current
V
CE
= 0 V; V
GE
= ±20 V 100 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 600 pF
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A 45 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82 W
45
40
290
60
1.2
1.1
ns
ns
ns
ns
mJ
mJ
I
CM
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 82 W
L = 100 µH;
clamped induct. load
T
VJ
= 125°C
V
CEmax
= V
CES
- L
S
·di/dt
20 A
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= 720 V; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 82 W; non-repetitive
10
µs
R
thJC
thermal resistance junction to case
(per IGBT) 1.37 K/W
R
thCH
thermal resistance case to heatsink
(per IGBT) 0.45 K/W
Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitive reverse voltage
T
VJ
= 150°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
15
10
A
A
V
F
forward voltage
I
F
= 15 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 2.0
3.5 V
V
I
R
reverse current
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C 0.2
0.06 mA
mA
I
RM
t
rr
max. reverse recovery current
reverse recovery time
V
R
= 600 V; I
F
= 10 A
di
F
/dt = -400 A/µs T
VJ
= 125°C
13
110
A
ns
R
thJC
thermal resistance junction to case
(per diode) 2.5 K/W
R
thCH
thermal resistance case to heatsink
(per diode) 0.05 K/W
T
C
= 25°C unless otherwise stated