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NTR2101PT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 7
1 Publication Order Number:
NTR2101P/D
NTR2101P
Small Signal MOSFET
−8.0 V, −3.7 A, Single P−Channel, SOT−23
Features
• Leading Trench Technology for Low R
DS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• This is a Pb−Free Device
Applications
• High Side Load Switch
• DC−DC Conversion
• Cell Phone, Notebook, PDAs, etc.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−8.0 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
t ≤ 5 s
T
A
= 25°C
I
D
−3.7
A
T
A
= 70°C −3.0
Power Dissipation
(Note 1)
t ≤ 5 s P
D
0.96 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
−11 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−1.2 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State
R
q
JA
160
°C/W
Junction−to−Ambient − t ≤ 5 s
R
q
JA
130
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
V
(BR)DSS
R
DS(on)
Typ I
D
Max
−8.0 V
39 mW @ −4.5 V
52 mW @ −2.5 V
79 mW @ −1.8 V
−3.7 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D
G
S
P−Channel
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM &
PIN ASSIGNMENT
TR7 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
1
2
3
TR7 MG
G
1
Gate
2
Source
Drain
3
Device Package Shipping
†
ORDERING INFORMATION
NTR2101PT1G 3000/Tape & ReelSOT−23
(Pb−Free)
www.onsemi.com
NTR2101P
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−8.0 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
10 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −6.4 V
T
J
= 25°C −1.0 mA
T
J
= 125°C −100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8.0 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.40 −1.0 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
2.7 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −3.5 A 39 52
mW
V
GS
= −2.5 V, I
D
= −3.0 A 52 72
V
GS
= −1.8 V, I
D
= −2.0 A 79 120
Forward Transconductance g
FS
V
GS
= −5.0 V, I
D
= −3.5 A 9.0 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −4.0 V
1173
pF
Output Capacitance C
OSS
289
Reverse Transfer Capacitance C
RSS
218
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −4.0 V,
I
D
= −3.5 A
12 15
nC
Gate−to−Source Charge Q
GS
3.8
Gate−to−Drain Charge Q
GD
2.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= −4.5 V, V
DD
= −4.0 V,
I
D
= −1.2 A, R
G
= 6.0 W
7.4 15
ns
Rise Time t
r
15.75 25
Turn−Off Delay Time t
d(off)
38 58
Fall Time t
f
31 51
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −1.2 A
T
J
= 25°C −0.73 −1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTR2101P
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0
2
4
6
8
10
012345
V
GS
= −2.6 V to −6.0 V
V
GS
= −2.4 V
V
GS
= −2.2 V
V
GS
= −2.0 V
V
GS
= −1.8 V
V
GS
= −1.4 V
V
GS
= −1.2 V
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
0
2
4
6
8
10
01234
T
J
= 25°C
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
V
DS
≥ −10 V
T
J
= 25°C
T
J
= 150°C
T
J
= −55°C
0
0.05
0.1
0.15
0.2
0.25
0123456
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
I
D
= −3.7 A
T
J
= 25°C
0
0.02
0.04
0.06
0.08
2345678
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 150°C
T
J
= 25°C
T
J
= −55°C
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= −4.5 V
0.8
0.9
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−50 −25 0 25 50 75 100 125 150
1.0
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
I
D
= −3.7 A
V
GS
= −4.5 V
100
1000
10000
100000
02468
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
I
DSS
, LEAKAGE (nA)
P1-P3P4-P6

NTR2101PT1G

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Manufacturer:
ON Semiconductor
Description:
MOSFET -8V 3.7A P-Channel
Lifecycle:
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