PMPB215ENEA/FX Datasheet PMPB215ENEAX, PMPB215ENEA/FX | P7-P9

NXP Semiconductors

PMPB215ENEA

80 V, single N-channel Trench MOSFET

Product data sheet 18 December 2013 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C 80 - - V

V

GSth

gate-source threshold

voltage

I

D

= 250 µA; V

DS

= V

GS

; T

j

= 25 °C 1.3 1.7 2.7 V

V

DS

= 80 V; V

GS

= 0 V; T

j

= 25 °C - - 1 µAI

DSS

drain leakage current

V

DS

= 80 V; V

GS

= 0 V; T

j

= 150 °C - - 10 µA

V

GS

= 20 V; V

DS

= 0 V; T

j

= 25 °C - - 15 µA

V

GS

= -20 V; V

DS

= 0 V; T

j

= 25 °C - - -15 µA

V

GS

= 10 V; V

DS

= 0 V; T

j

= 25 °C - - 1 µA

I

GSS

gate leakage current

V

GS

= -10 V; V

DS

= 0 V; T

j

= 25 °C - - -1 µA

V

GS

= 10 V; I

D

= 1.9 A; T

j

= 25 °C - 175 230 mΩ

V

GS

= 10 V; I

D

= 1.9 A; T

j

= 150 °C - 340 445 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= 4.5 V; I

D

= 1.8 A; T

j

= 25 °C - 195 275 mΩ

g

fs

forward

transconductance

V

DS

= 10 V; I

D

= 1.9 A; T

j

= 25 °C - 7 - S

R

G

gate resistance f = 1 MHz; T

j

= 25 °C - 1 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 4.8 7.2 nC

Q

GS

gate-source charge - 0.6 - nC

Q

GD

gate-drain charge

V

DS

= 40 V; I

D

= 1.9 A; V

GS

= 10 V;

T

j

= 25 °C

- 0.9 - nC

C

iss

input capacitance - 215 - pF

C

oss

output capacitance - 25 - pF

C

rss

reverse transfer

capacitance

V

DS

= 40 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 15 - pF

t

d(on)

turn-on delay time - 3.5 - ns

t

r

rise time - 2 - ns

t

d(off)

turn-off delay time - 9.5 - ns

t

f

fall time

V

DS

= 40 V; I

D

= 1.9 A; V

GS

= 10 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 3 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= 0.8 A; V

GS

= 0 V; T

j

= 25 °C - 0.8 1.2 V

NXP Semiconductors

PMPB215ENEA

80 V, single N-channel Trench MOSFET

Product data sheet 18 December 2013 7 / 15

V

DS

(V)

0 542 31

aaa-008560

3.8

1.9

5.7

7.6

I

D

(A)

0

10 V 4.5 V

3.5 V

3.2 V

3 V

2.8 V

V

GS

= 2.5 V

T

j

= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

V

GS

(V)

0 321

10

-4

10

-5

10

-3

I

D

(A)

10

-6

min typ max

T

j

= 25 °C; V

DS

= 10 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

I

D

(A)

0 862 4

aaa-008562

300

600

900

R

DSon

(mΩ)

0

V

GS

= 10 V

2.5 V 2.8 V 3 V 3.2 V

3.5 V

4.5 V

T

j

= 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

V

GS

(V)

0 107.52.5 5.0

aaa-008563

300

600

900

R

DSon

(mΩ)

0

T

j

= 150 °C

T

j

= 25 °C

I

D

= 1.9 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors

PMPB215ENEA

80 V, single N-channel Trench MOSFET

Product data sheet 18 December 2013 8 / 15

V

GS

(V)

0 431 2

aaa-008564

4

2

6

8

I

D

(A)

0

T

j

= 150 °C T

j

= 25 °C

V

DS

> I

D

× R

DSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

T

j

(°C)

-60 1801200 60

aaa-008565

1.2

0.8

1.6

2.0

a

0.4

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

T

j

(°C)

-60 1801200 60

aaa-008566

2

1

3

4

V

GS(th)

(V)

0

min

typ

max

I

D

= 0.25 mA; V

DS

= V

GS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

V

DS

(V)

10

-1

10

2

101

aaa-008567

10

2

10

3

C

(pF)

1

C

iss

C

oss

C

rss

f = 1 MHz; V

GS

= 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMPB215ENEA/FX

PMPB215ENEA/FX

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