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ADG788BCPZ-REEL7

P1-P3P4-P6P7-P9P10-P11
a
ADG786/ADG788
2.5 , 1.8 V to 5.5 V, 2.5 V Triple/Quad
SPDT Switches in Chip Scale Packages
GENERAL DESCRIPTION
The ADG786 and ADG788 are low voltage, CMOS devices
comprising three independently selectable SPDT (single pole,
double throw) switches and four independently selectable SPDT
switches respectively.
Low power consumption and operating supply range of 1.8 V to
5.5 V and dual ± 2.5 V make the ADG786 and ADG788 ideal
for battery powered, portable instruments and many other
applications. All channels exhibit break-before-make switch-
ing action preventing momentary shorting when switching
channels. An EN input on the ADG786 is used to enable or
disable the device. When disabled, all channels are switched OFF.
These multiplexers are designed on an enhanced submicron
process that provides low power dissipation yet gives high switch-
ing speed, very low on resistance, high signal bandwidths and
low leakage currents. On resistance is in the region of a few
ohms, is closely matched between switches and very flat over
the full signal range. These parts can operate equally well in
either direction and have an input signal range which extends to
the supplies.
The ADG786 and ADG788 are available in small 20-lead
chip scale packages.
PRODUCT HIGHLIGHTS
1. Small 20-Lead 4 mm × 4 mm Chip Scale Packages (CSP).
2. Single/Dual Supply Operation. The ADG786 and ADG788
are fully specified and guaranteed with 3 V ± 10% and
5 V ± 10% single supply rails, and ± 2.5 V ± 10% dual
supply rails.
3. Low On Resistance (2.5 Ω typical).
4. Low Power Consumption (<0.01 μW).
5. Guaranteed Break-Before-Make Switching Action.
FUNCTIONAL BLOCK DIAGRAMS
S1B
D1
S1A
A0
S2A
D2
S2B
S3B
D3
S3A
A1
ADG786
SWITCHES SHOWN FOR A LOGIC “1” INPUT
S1A
D1
S1B
IN1
IN2
S2B
D2
S2A
S3A
D3
S3B
IN3
IN4
S4B
D
S4A
ADG788
EN
A2
LOGIC
FEATURES
1.8 V to 5.5 V Single Supply
±2.5 V Dual Supply
2.5 ȍ On Resistance
0.5 ȍ On Resistance Flatness
100 pA Leakage Currents
19 ns Switching Times
Triple SPDT: ADG786
Quad SPDT: ADG788
20-Lead 4 mm × 4 mm Chip Scale Packages
Low Power Consumption
TTL/CMOS-Compatible Inputs
For Functionally-Equivalent Devices in 16-Lead TSSOP
Packages, See ADG733/ADG734
Qualified for automotive applications
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems
Re
v. C Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2001–2015 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
REV.
–2–
ADG786/ADG788–SPECIFICATIONS
1
B Version
–40C
Parameter +25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
4.5 5.0 Ω max Test Circuit 1
On-Resistance Match between 0.1 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
Channels (ΔR
ON
) 0.4 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 0.5 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
1.2 Ω max
LEAKAGE CURRENTS V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF) ± 0.01 nA typ V
D
= 4.5 V/1 V, V
S
= 1 V/4.5 V;
± 0.1 ± 0.3 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ± 0.01 nA typ V
D
= V
S
= 1 V, or 4.5 V;
± 0.1 ± 0.5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
± 0.1 μA max
C
IN
, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
19 ns typ R
L
= 300 Ω, C
L
= 35 pF;
34 ns max V
S1A
= 3 V, V
S1B
= 0 V, Test Circuit 4
t
OFF
7 ns typ R
L
= 300 Ω, C
L
= 35 pF;
12 ns max V
S
= 3 V, Test Circuit 4
ADG786 t
ON
(EN) 20 ns typ R
L
= 300 Ω, C
L
= 35 pF;
40 ns max V
S
= 3 V, Test Circuit 5
t
OFF
(EN) 7 ns typ R
L
= 300 Ω, C
L
= 35 pF;
12 ns max V
S
= 3 V, Test Circuit 5
Break-Before-Make Time Delay, t
D
13 ns typ R
L
= 300 Ω, C
L
= 35 pF;
1 ns min V
S
= 3 V, Test Circuit 6
Charge Injection ± 3 pC typ V
S
= 2 V, R
S
= 0 Ω, C
L
= 1 nF;
Test Circuit 7
Off Isolation – dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
Channel-to-Channel Crosstalk – dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 9
–3 dB Bandwidth 160 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 10
C
S
(OFF) 11 pF typ f = 1 MHz
C
D
, C
S
(ON) 34 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V
I
DD
0.001 μA typ Digital Inputs = 0 V or 5.5 V
1.0 μA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 5 V 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
$
80
80
REV.
–3–
ADG786/ADG788
SPECIFICATIONS
1
B Version
–40C
Parameter +25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
)6 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
11 12 Ω max Test Circuit 1
On-Resistance Match between 0.1 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
Channels (ΔR
ON
) 0.5 Ω max
On-Resistance Flatness (R
FLAT(ON)
)3Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
LEAKAGE CURRENTS V
DD
= 3.3 V
Source OFF Leakage I
S
(OFF) ± 0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
± 0.1 ± 0.3 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ± 0.01 nA typ V
S
= V
D
= 1 V or 3 V;
± 0.1 ± 0.5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 μA typ V
IN
= V
INL
or V
INH
± 0.1 μA max
C
IN
, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
28 ns typ R
L
= 300 Ω, C
L
= 35 pF;
55 ns max V
S1A
= 2 V, V
S1B
= 0 V, Test Circuit 4
t
OFF
9 ns typ R
L
= 300 Ω, C
L
= 35 pF;
16 ns max V
S
= 2 V, Test Circuit 4
ADG786 t
ON
(EN) 29 ns typ R
L
= 300 Ω, C
L
= 35 pF;
60 ns max V
S
= 2 V, Test Circuit 5
t
OFF
(EN) 9 ns typ R
L
= 300 Ω, C
L
= 35 pF;
16 ns max V
S
= 2 V, Test Circuit 5
Break-Before-Make Time Delay, t
D
22 ns typ R
L
= 300 Ω, C
L
= 35 pF;
1 ns min V
S
= 2 V, Test Circuit 6
Charge Injection ± 3 pC typ V
S
= 1 V, R
S
= 0 Ω, C
L
= 1 nF;
Test Circuit 7
Off Isolation – dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
Channel-to-Channel Crosstalk – dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 9
–3 dB Bandwidth 160 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 10
C
S
(OFF) 11 pF typ f = 1 MHz
C
D
, C
S
(ON) 34 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.3 V
I
DD
0.001 μA typ Digital Inputs = 0 V or 3.3 V
1.0 μA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 3 V 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
$
80
80
P1-P3P4-P6P7-P9P10-P11

ADG788BCPZ-REEL7

Mfr. #:
Buy ADG788BCPZ-REEL7
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 2.5 Ohm 5.5V CMOS Quad SPDT
Lifecycle:
New from this manufacturer.
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