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PD55008

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
1/18March, 21 2003
PD55008
PD55008S
RF POWER TRANSISTORS
The LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
OUT
= 8 W with 17 dB gain @ 500 MHz / 12.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55008 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies up
to 1 GHz.
PD55008 boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology mount-
ed in the first true SMD plastic RF power package,
PowerSO-10RF. PD55008’s superior linearity per-
formance makes it an ideal solution for car mobile
radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD55008
BRANDING
PD55008
PowerSO-10RF
(straight lead)
ORDER CODE
PD55008S
BRANDING
PD55008S
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Voltage 40 V
V
GS
Gate-Source Voltage ± 20 V
I
D
Drain Current 4 A
P
DISS
Power Dissipation (@ Tc = 70°C) 52.8 W
Tj Max. Operating Junction Temperature 165 °C
T
STG
Storage Temperature -65 to +150 °C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance 1.8 °C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PD55008 - PD55008S
2/18
ELECTRICAL SPECIFICATION (T
CASE
= 25°C)
STATIC
DYNAMIC
IMPEDANCE DATA
Symbol Test Conditions Min. Typ. Max. Unit
I
DSS
V
GS
= 0 V V
DS
= 28 V
1 µA
I
GSS
V
GS
= 20 V V
DS
= 0 V
1 µA
V
GS(Q)
V
DS
= 10 V
I
D
= 150 mA
2.0 5.0 V
V
DS(ON)
V
GS
= 10 V I
D
= 1.5 A
0.67 V
g
FS
V
DS
= 10 V I
D
= 1.5 A
1.6 mho
C
ISS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz
58 pF
C
OSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz
38 pF
C
RSS
V
GS
= 0 V V
DS
= 12.5 V f = 1 MHz
2.8 pF
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
V
DD
= 12.5 V I
DQ
= 150 mA f = 500 MHz
8W
G
P
V
DD
= 12.5 V I
DQ
= 150 mA P
OUT
= 8 W f = 500 MHz
15 17 dB
η
D
V
DD
= 12.5 V I
DQ
= 150 mA P
OUT
= 8 W f = 500 MHz
50 55 %
Load
mismatch
V
DD
= 15.5 V I
DQ
= 150 mA P
OUT
= 8 W f = 500 MHz
ALL PHASE ANGLES
20:1 VSWR
PIN CONNECTION
GATE
SOURCE
DRAIN
SC15200
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
SC13140
PD55008S
FREQ. MHz
Z
IN
(Ω)Z
DL
(Ω)
480 1.075 - j 2.727 2.046 + j 1.960
500 1.409 - j 3.448 2.129 + j 3.219
520 1.586 - j 2.087 3.082 + j 2.043
PD55008
FREQ. MHz
Z
IN
(Ω)Z
DL
(Ω)
480 1.141 - j 2.054 1.649 + j 2.916
500 1.589 - j 1.185 1.561 + j 2.639
520 1.649 - j 1.965 1.716 + j 1.552
800 1.05 + j 0.54 2.62 - j 1.91
850 1.50 + j 1.00 2.26 - j 1.54
900 1.95 + j 2.28 2.70 - j 1.90
3/18
PD55008 - PD55008S
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.92
0.94
0.96
0.98
1
1.02
1.04
1.06
VGS, GATE-SOURCE VOLTAGE(NORMALIZED)
I
D
=
.25A
I
D
= .5A
I
D
= 1A
I
D
= 2A
I
D
= 1.5A
V
DS
= 10 V
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
0 5 10 15 20 25
VDD, DRAIN VOLTAGE (V)
1
10
100
1000
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f=1 MHz
Drain Current vs. Gate-Source Voltage
123456
VGS, GATE-SOURCE VOLTAGE (V )
0
1
2
3
4
Id, DRAIN CURRENT (A)
Vds = 10 V
Gate-Source Voltage vs. Case Temperature
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

PD55008

Mfr. #:
Buy PD55008
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors N-Ch 40 Volt 4 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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