VUO68-08NO7 Datasheet VUO68-16NO7, VUO68-08NO7, VUO68-14NO7 | P1-P3

VUO68-08NO7

3~ Rectifier Bridge

Standard Rectifier Module

K N DH A

Part number

VUO68-08NO7

Features / Advantages: Applications: Package:

● Package with DCB ceramic

● Improved temperature and power cycling

● Planar passivated chips

● Very low forward voltage drop

● Very low leakage current

● Diode for main rectification

● For three phase bridge configurations

● Supplies for DC power equipment

● Input rectifiers for PWM inverter

● Battery DC power supplies

● Field supply for DC motors

ECO-PAC1

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 9 mm

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3000

RRM

800

I70

FSM

300

DAV

V

=

V

A

=

I

3~

Rectifier

IXYS reserves the right to change limits, conditions and dimensions.

20140226bData according to IEC 60747and per semiconductor unless otherwise specified

VUO68-08NO7

V = V

A²s

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.15

R 1.1 K/W

R

min.

70

V

RSM

V

40T = 25°C

VJ

T = °C

VJ

mA1.5V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

105

P

tot

110 WT = 25°C

C

R K/W0.4

20

800

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.50

T = 25°C

VJ

150

V

F0

V0.82T = °C

VJ

150

r

F

12.2

mΩ

V1.12T = °C

VJ

I = A

F

V

20

1.39

I = A

F

60

I = A

F

60

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

RRM

V800

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

10

j

unction capacitance

V = V;400 T = 25°Cf = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T = °C

VJ

150

300

325

315

A

255

275

450

440

800

DAV

d =rectangular ⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

900

IXYS reserves the right to change limits, conditions and dimensions.

20140226bData according to IEC 60747and per semiconductor unless otherwise specified

VUO68-08NO7

Ratings

XXX XX-XXXXX

YYCW Lot#

Made in Germany

Circuit Diagram

Part Number Date Code

Logo

Package

T

op

°C

M

D

Nm2

mounting torque

1.4

T

VJ

°C150

virtual junction temperature

-40

Weight g19

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

V V

t = 1 second

V

t = 1 minute

isolation voltage

mm

6.0

10.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

100 A

per terminal

125-40

terminal to terminal

ECO-PAC1

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

VUO68-08NO7 483303Box 25VUO68-08NO7Standard

3000

ISOL

T

stg

°C125

storage temperature

-40

2500

threshold voltage

V0.82

mΩ

V

0 max

R

0 max

slope resistance *

11

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Rectifier

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20140226bData according to IEC 60747and per semiconductor unless otherwise specified

VUO68-08NO7

VUO68-08NO7

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