2N5179 Datasheet 2N5179 | P1-P3

2N5179

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:DESCRIPTION:

The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment. It is ideal

for pre-driver, low noise amplifier, and oscillator applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)C)

Symbol

Parameter

Value

Unit

V

CEO

Collector-Emitter Voltage 12 Vdc

V

CBO

Collector-Base Voltage 20 Vdc

V

EBO

Emitter-Base Voltage 2.5 Vdc

I

C

Collector Current 50 mA

Thermal DataThermal Data

P

D

Total Device Dissipation @ T

A

= 25ºC

Derate above 25ºC

300

1.71

mW

mW/ ºC

1

2

3

4

1. Emitter

2. Base

3. Collector

4. Case

TO-72

Features

• Silicon NPN, TO-72 packaged VHF/UHF Transistor

• Low Noise, NF = 4.5 dB (max) @ 200 MHz

• High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

mAdc

• Characterized with S-Parameters

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

2N5179

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)

STATIC STATIC

(off)(off)

Value

Symbol Test Conditions

Min. Typ. Max.

Unit

BVCEO Collector-Emitter Sustaining Voltage

(IC = 3.0 mAdc, IB = 0)

12

-

Vdc

BVCBO Collector-Base Breakdown Voltage

(IC=1.0 Adc, IE=0)

20

-

Vdc

BVEBO Emitter Base Breakdown Voltage

(IE = 0.01 mAdc, IC = 0)

2.5

-

- Vdc

ICBO Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

-

.02

mA

(on)(on)

HFE DC Current Gain

(IC = 3.0 mAdc, VCE = 1.0 Vdc)

25

-

250

-

VBE(sat) Base-Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

-

1.0

Vdc

VCE(sat) Collector-Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

-

0.4

Vdc

DYNAMICDYNAMIC

Value

Symbol Test Conditions

Min. Typ. Max.

Unit

f

T

Current-Gain - Bandwidth Product

(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)

900

1500

-

MHz

CCB Collector-base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

-

1.0

pF

FUNCTIONALFUNCTIONAL

Value

Symbol Test Conditions

Min. Typ. Max.

Unit

NF Noise Figure (figure 1) IC = 1.5 mAdc, VCE = 6.0

Vdc, f = 200 MHz

-

4.5

dB

GPE Common-Emitter

Amplifier Power Gain

(figure 1)

IC = 1.5 mAdc, VCE = 6.0

Vdc, f = 200 MHz

20

-

dB

2N5179

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

FUNCTIONAL (CONT)FUNCTIONAL (CONT)

Value

Symbol Test Conditions

Min. Typ. Max.

Unit

GU

MAX

Maximum Unilateral

Gain (1)

IC = 5 mAdc, VCE = 6.0

Vdc, f = 200 MHz

-

17

-

dB

MAG Maximum Available Gain IC = 5 mAdc, VCE = 6.0

Vdc, f = 200 MHz

-

18

-

dB

|S

21

|

2

Insertion Gain IC = 5 mAdc, VCE = 6.0

Vdc, f = 200 MHz

-

12

-

dB

Note: 1. Maximum Unilateral Gain = |

S

21|

2

/ (1 - |

S

11|

2

) (1 - |

S

22|

2

)

TEST CIRCUIT SCHEMATICTEST CIRCUIT SCHEMATIC

Figure 1. 200 MHz Amplifier for Power Gain and Noise Figure specifications.

Power Out

C1

Power In

C2

C3

L1

R1

D1

D2

C4

L3

L2

C6

C5

RFC

1.0 uH

R2

C7

C8

C9

-V

EE

V

CC

External Shield

C1: 0.02 uF

C2: 3.0-35 pF

C3, C7, C8: 2.0-10 pF

C4: 1.0-5.0 pF

C5, C9: 0.1 uF

C6: 0.001 uF

Cbypass: 1200 pF

R1: 91 ohm

R2: 10 K

L1: 1 ¾ turn, #18 AWG

0.5” L, 0.5” Dia.

L2: 2 turn, #16 AWG

0.5” L, 0.5” Dia.

L3: 2 turn, #13 AWG

0.25” L, 0.5” Dia. Position ¼”

from L2

2N5179

2N5179

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