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BUL381D

P1-P3P4-P6
BUL381D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ LARGE RBSOA
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL381D is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
®
INTERNAL SCHEMATIC DIAGRAM
July 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 800 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 400 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 9 V
I
C
Collector Current 5 A
I
CM
Collector Peak Current (t
p
< 5 ms) 8 A
I
B
Base Current 2 A
I
BM
Base Peak Current (t
p
< 5 ms) 4 A
P
tot
Total Dissipation at T
c
= 25
o
C70W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
TO-220
1/6
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V T
j
= 125
o
C
100
500
µA
µA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 400 V 250 µA
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA L = 25 mH 400 V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 10 mA 9 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.75 A
0.5
0.7
1.1
V
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
1.1
1.2
V
V
h
FE
∗ DC Current Gain I
C
= 2 A V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V
8
10
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A V
CC
= 250 V t
p
= 30 µs
I
B1
= - I
B2
= 0.4 A
1.5 2.5
0.8
µs
µs
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A I
B1
= 0.4 A
V
BE(off)
= -5 V R
BB
= 0 Ω
V
CL
= 250 V L = 200 µH
T
j
= 125
o
C
1.3
100
µs
ns
V
f
Diode Forward Voltage I
C
= 2 A 2.5 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Derating Curve
BUL381D
2/6
DC Current Gain
Collector Emitter Saturation Voltage
Inductive Fall Time
DC Current Gain
Base Emitter Saturation Voltage
Inductive Storage Time
BUL381D
3/6
P1-P3P4-P6

BUL381D

Mfr. #:
Buy BUL381D
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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