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RJP60F0DPE-00#J3
P1-P3
P4-P6
P7-P7
RJP60F0DPE
Preliminary
R07DS0540EJ0100 Rev.1.00
Page 4 of 6
Sep 09, 2011
Ca
p
ac
i
tance
C
(
pF
)
1
10
100
1000
10000
01
0
0
5
01
5
0
200
2
5
0
300
Gate
C
h
arge
Q
g
(nc)
D
y
nam
i
c
I
n
pu
t
C
h
aracter
is
t
i
c
s
(
Ty
p
i
ca
l
)
Ty
p
i
ca
l
Ca
p
ac
i
tance
vs.
Co
ll
ector
to
E
m
i
tter
V
o
l
tage
8
00
6
00
4
00
200
0
0
1
6
12
8
4
0
2
4
12
3
64
8
6
0
I
C
=
2
5
A
T
a
=
2
5
°
C
V
G
E
V
C
E
V
CC
= 6
00
V
300
V
V
CC
= 6
00
V
300
V
Co
ll
ector
to
E
m
i
tter
V
o
l
tage
V
C
E
(
V
)
Co
ll
ector
to
E
m
i
tter
V
o
l
tage
V
C
E
(
V
)
Gate
to
E
m
i
tter
V
o
l
tage
V
G
E
(
V
)
C
i
e
s
Coe
s
Cre
s
V
G
E
=
0
V
f =
1
MHz
T
a
=
2
5
°
C
1
10
100
1000
S
wi
tc
hi
ng
C
h
aracter
is
t
i
c
s
(
Ty
p
i
ca
l
)
(1)
S
wi
tc
hi
ng
Ti
me
t
(n
s
)
11
0
1
0
0
Co
ll
octor
C
u
rrent
I
C
(A)
t
d(o
ff
)
t
d(on)
t
f
t
r
V
CC
=
300
V,
V
G
E
=
1
5 V
Rg
= 5
Ω
, T
a
=
2
5
°
C
,
Re
sis
t
iv
e
l
oad
S
wi
tc
hi
ng
C
h
aracter
is
t
i
c
s
(
Ty
p
i
ca
l
)
(2)
S
wi
tc
hi
ng
Ti
me
t
(n
s
)
11
0
1
0
0
t
d(o
ff
)
t
d(on)
t
f
t
r
10
100
1000
V
CC
=
300
V,
V
G
E
=
1
5 V
I
C
=
30
A
, T
a
=
2
5
°
C
,
Re
si
t
iv
e
l
oad
Gate
Re
sis
tance
Rg
(
Ω
)
S
wi
tc
hi
ng
C
h
aracter
is
t
i
c
s
(
Ty
p
i
ca
l
)
(3)
S
wi
tc
hi
ng
Ti
me
t
(n
s
)
2
55
0
75
100
12
5
1
5
0
t
d(o
ff
)
t
d(on)
10
100
1000
Ca
s
e
T
em
p
erat
u
re
T
c
(
°
C)
t
f
t
r
V
CC
=
300
V,
V
G
E
=
1
5 V
I
C
=
30
A
,
Rg
= 5
Ω
,
Re
si
t
iv
e
l
oad
RJP60F0DPE
Preliminary
R07DS0540EJ0100 Rev.1.00
Page 5 of 6
Sep 09, 2011
P
uls
e
Wi
dt
h
P
W
(
s
)
N
orma
liz
ed
T
ran
si
ent
Th
erma
l I
m
p
edance
γ
s
(t)
N
orma
liz
ed
T
ran
si
ent
Th
erma
l I
m
p
edance
vs.
P
uls
e
Wi
dt
h
0
.
03
1
0
.
1
0
.
3
3
10
μ
100
μ
1
m1
0
m1
0
0
m1
10
P
D
M
P
W
T
D
=
P
W
T
θ
j –
c(t)
=
γ
s
(t)
•
θ
j –
c
θ
j –
c
=
1
.
02
°
C
/W, T
c
=
2
5
°
C
0
.
0
5
0
.
2
0
.
1
0
.5
D
=
1
0
.
02
T
c
=
2
5
°
C
0
.
01
1
sh
ot
puls
e
S
wi
tc
hi
ng
Ti
me
T
e
s
t
C
i
rc
ui
t
W
a
v
e
f
orm
D
i
ode
c
l
am
p
D
.U.T
Rg
L
V
CC
t
d(o
ff
)
t
o
ff
t
on
t
d(on)
t
f
t
r
t
ta
il
9
0
%
9
0
%
9
0
%
10
%
10
%
10
%
10
%
1
%
V
G
E
I
C
V
C
E
RJP60F0DPE
Preliminary
R07DS0540EJ0100 Rev.1.00
Page 6 of 6
Sep 09, 2011
Package Dimensions
10
.
2
±
0
.
3
1
.
3
7 ±
0
.
2
(1
.5
)
(1
.4
)
8.6 ±
0
.
3
10
.
0
+
0
.
3
–
0
.5
4.44 ±
0
.
2
1
.
3
±
0
.
1
5
0
.
1
+
0
.
2
–
0
.
1
0
.4 ±
0
.
1
2
.49 ±
0
.
2
0
.86
+
0
.
2
–
0
.
1
2
.54 ±
0
.5
2
.54 ±
0
.5
1
.
3
±
0
.
2
3
.
0
+
0
.
3
–
0
.5
(1
.5
)
7.8
6.6
2
.
2
1
.7
7.8
7.
0
SC
-8
31
.
30g
M
ASS
[Typ.]
L
DPA
K
(S)
-
(1)
/ L
DPA
K
(S)
-
(1)
V
PRSS000
4
A
E-
B
R
ENE
SAS
Code
JEIT
A
Package
Code
Pre
vi
o
us
Code
U
n
i
t
:
mm
Package
N
ame
L
DPA
K
(S)
-
(1)
Ordering Information
Orderable Part Number
Quan
tity Shipping
Container
RJP60F0DPE-00-J3 1000
pcs
Taping
P1-P3
P4-P6
P7-P7
RJP60F0DPE-00#J3
Mfr. #:
Buy RJP60F0DPE-00#J3
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors Power Module - Lead Free
Lifecycle:
New from this manufacturer.
Delivery:
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RJP60F0DPE-00#J3