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MMBD7000-E3-08

P1-P3
MMBD7000
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 15-May-13
1
Document Number: 85736
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode, Dual
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13” reel (8 mm tape), 10K/box
08/3K per 7” reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual diode, especially suited for
automatic insertion
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Notes
(1)
Device on alumina substrate
(2)
On FR-5 board
12
3
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
MMBD7000
MMBD7000-E3-08 or MMBD7000-E3-18
Dual diodes serial M5C Tape and reel
MMBD7000-HE3-08 or MMBD7000-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
100 V
Forward current (continuous) I
F
200 mA
Non-repetitive peak forward current t = 1 s I
FSM
500 mA
Power dissipation on FR-5 board
P
tot
225 mW
Derate above 25 °C P
tot
1.8 mW/K
Total device dissipation on alumina substrate
P
tot
300 mW
Derate above 25 °C P
tot
2.4 mW/K
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient air
R
thJA
(1)
417 K/W
R
thJA
(2)
556 K/W
Maximum junction temperature T
j
150 °C
Storage temperature range T
stg
-55 to +150 °C
Operating temperature range T
op
-55 to +150 °C
MMBD7000
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 15-May-13
2
Document Number: 85736
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA V
(BR)
100 V
Leakage current
V
R
= 50 V I
R
1000 nA
V
R
= 100 V I
R
3μA
V
R
= 50 V, T
j
= 125 °C I
R
100 μA
Forward voltage
I
F
= 1 mA V
F
0.55 0.70 V
I
F
= 10 mA V
F
0.67 0.82 V
I
F
= 100 mA V
F
0.75 1.10 V
Diode capacitance V
R
= 0, f = 1 MHz C
D
1.5 pF
Reverse recovery time
I
F
= I
R
= 10 mA, i
R
= 1 mA,
R
L
= 100
t
rr
4ns
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 08-Feb-17
1
Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
P1-P3

MMBD7000-E3-08

Mfr. #:
Buy MMBD7000-E3-08
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 100 Volt 200mA 4ns 500mA IFSM
Lifecycle:
New from this manufacturer.
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