OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MJ802G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
1 Publication Order Number:
MJ802/D
MJ802
High−Power NPN Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100−Watts music power per channel.
Features
• High DC Current Gain − h
FE
= 25−100 @ I
C
= 7.5 A
• Excellent Safe Operating Area
• Complement to the PNP MJ4502
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CER
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Collector−Emitter Voltage V
CEO
90 Vdc
Emitter−Base Voltage V
EB
4.0 Vdc
Collector Current I
C
30 Adc
Base Current I
B
7.5 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
200
1.14
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +200
_C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
q
JC
0.875
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
30 AMPERE
POWER TRANSISTOR
NPN SILICON
100 VOLTS − 200 WATTS
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MJ802 TO−204 100 Units / Tray
MJ802G TO−204
(Pb−Free)
100 Units / Tray
MJ802G
AYYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MJ802 = Device Code
G = Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
MJ802
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 200 mAdc, R
BE
= 100 W)
BV
CER
100 − Vdc
Collector−Emitter Sustaining Voltage (Note 1) (I
C
= 200 mAdc)
V
CEO(sus)
90 − Vdc
Collector−Base Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
C
= 150_C)
I
CBO
−
−
1.0
5.0
mAdc
Emitter−Base Cutoff Current
(V
BE
= 4.0 Vdc, I
C
= 0)
I
EBO
− 1.0 mAdc
ON CHARACTERISTICS
(1)
DC Current Gain (Note 1)
(I
C
= 7.5 Adc, V
CE
= 2.0 Vdc)
h
FE
25 100 −
Base−Emitter “On” Voltage
(I
C
= 7.5 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
− 1.3 Vdc
Collector−Emitter Saturation Voltage
(I
C
= 7.5 Adc, I
B
= 0.75 Adc)
V
CE(sat)
− 0.8 Vdc
Base−Emitter Saturation Voltage
(I
C
= 7.5 Adc, I
B
= 0.75 Adc)
V
BE(sat)
− 1.3 Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
2.0 − MHz
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
200
150
100
50
0
40 60 120 140 200
Figure 1. Power−Temperature Derating Curve
T
C
, CASE TEMPERATURE (°C)
0 20 80 100
160
180
P
D
, POWER DISSIPATION (WATTS)
MJ802
http://onsemi.com
3
h
FE
, NORMALIZED CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 175° C
3.0
I
C
, COLLECTOR CURRENT (AMP)
1.0
2.0
0.7
1.0
0.5
0.1
Figure 2. DC Current Gain
Figure 3. ‘‘On” Voltages
V
BE(sat)
@ I
C
/I
B
= 10
V
CE
= 2.0 V
25°C
− 55°C
T
J
= 25°C
0.03 0.1 0.2 0.3 0.5 10 20 30
ON" VOLTAGE (VOLTS)
0.3
0.2
0.05 2.0 3.0 5.0
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF I
CBO
.
2.0
1.8
1.4
1.6
1.2
0
1.0
0.8
0.6
0.4
0.2
1.00.03 0.1 0.2 0.3 0.5 10 20 300.05 2.0 3.0 5.0
V
BE
@ V
CE
= 2.0 V
V
CE(sat)
@ I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (AMP)
50
1.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0 20
10
1.0
0.2
10
Figure 4. Active Region Safe Operating Area
100
5.0
2.0
0.5
0.1
20
2.0 3.0 1005030
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS T
C
= 25°C
PULSE DUTY CYCLE ≤ 10%
T
J
= 200° C
100 ms
1.0 ms
5.0ms
dc
The Safe Operating Area Curves indicate I
C
− V
CE
limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum T
J
, power
temperature derating must be observed for both steady state
and pulse power conditions.
P1-P3P4-P4

MJ802G

Mfr. #:
Buy MJ802G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 30A 90V 200W NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet