Philips Semiconductors
BUK75/76150-55A
TrenchMOS™ standard level FET
Product data Rev. 02 — 25 November 2003 5 of 15
9397 750 12342
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
=0V
T
j
=25°C55--V
T
j
= −55 °C50--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
;
Figure 9
T
j
=25°C234V
T
j
= 175 °C1--V
T
j
= −55 °C - - 4.4 V
I
DSS
drain-source leakage current V
DS
= 55 V; V
GS
=0V
T
j
=25°C - 0.05 10 µA
T
j
= 175 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
= 0 V - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=5A;
Figure 7 and 8
T
j
=25°C - 127 150 mΩ
T
j
= 175 °C - - 300 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge V
GS
=10V; V
DD
=44V;
I
D
=3A;Figure 14
- 5.5 - nC
Q
gs
gate-source charge - 1 - nC
Q
gd
gate-drain (Miller) charge - 2.7 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V;
f = 1 MHz; Figure 12
- 242 322 pF
C
oss
output capacitance - 40 48 pF
C
rss
reverse transfer capacitance - 25 35 pF
t
d(on)
turn-on delay time V
DD
= 25 V; R
L
= 2.7 Ω;
V
GS
=10V; R
G
= 5.6 Ω
-3-ns
t
r
rise time - 26 - ns
t
d(off)
turn-off delay time - 8 - ns
t
f
fall time - 10 - ns
L
d
internal drain inductance from drain lead 6 mm from
package to center of die
- 4.5 - nH
from contact screw on
mounting base to center of
die SOT78
- 3.5 - nH
from upper edge of drain
mounting base to center of
die SOT404
- 2.5 - nH
L
s
internal source inductance from source lead 6 mm from
package to source bond pad
- 7.5 - nH
