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BYC5X-600,127

P1-P3P4-P6P7-P9P10-P11
BYC5X-600_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 September 2007 3 of 10
NXP Semiconductors
BYC5X-600
Rectifier diode hyperfast
5. Thermal characteristics
6. Isolation characteristics
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
thermal resistance from junction to heatsink with heatsink compound;
see
Figure 1
- - 5.5 K/W
without heatsink compound - - 7.2 K/W
R
th(j-a)
thermal resistance from junction to ambient in free air - 60 - K/W
Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width
001aaf257
10
−2
10
−1
1
10
Z
th(j-h)
(K/W)
10
−3
t
p
(s)
10
−6
10110
−1
10
−5
10
−3
10
−2
10
−4
t
p
t
p
T
P
t
T
δ =
Table 5. Isolation limiting values and characteristics
T
h
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity ≤ 65 %; clean and dust free
- - 2500 V
C
isol
isolation capacitance from cathode to external heatsink; f = 1 MHz - 10 - pF
BYC5X-600_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 September 2007 4 of 10
NXP Semiconductors
BYC5X-600
Rectifier diode hyperfast
7. Characteristics
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
= 5 A; T
j
= 150 °C; see Figure 2 - 1.40 1.75 V
I
F
= 10 A; T
j
= 150 °C; see Figure 2 - 1.75 2.20 V
I
F
= 5 A; see Figure 2 - 2.00 2.90 V
I
R
reverse current V
R
= 600 V - 9 100 µA
V
R
= 500 V; T
j
= 100 °C - 0.9 3.0 mA
Dynamic characteristics
t
rr
reverse recovery time I
F
=1AtoV
R
=30V;dI
F
/dt=50A/µs;
see
Figure 3
- 3050ns
I
F
= 5 A to V
R
= 400 V;
dI
F
/dt = 500 A/µs; see Figure 3
-19-ns
I
F
= 5 A to V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 100 °C;
see
Figure 3
- 2530ns
I
RM
peak reverse recovery
current
I
F
= 5 A to V
R
= 400 V;
dI
F
/dt=50A/µs; T
j
= 125 °C;
see
Figure 3
- 0.7 3 A
I
F
= 5 A to V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 100 °C;
see
Figure 3
- 8 11 A
V
FR
forward recovery
voltage
I
F
= 10 A; dI
F
/dt = 100 A/µs;
see
Figure 4
- 9 11 V
BYC5X-600_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 September 2007 5 of 10
NXP Semiconductors
BYC5X-600
Rectifier diode hyperfast
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
=25°C; maximum values
Fig 2. Forward current as a function of forward voltage
003aab692
0
1
2
3
4
5
6
7
0123
V
F
(V)
I
F
(A)
(1) (2) (3)
Fig 3. Reverse recovery definitions Fig 4. Forward recovery definitions
001aab911
t
rr
time
100 %
10 %
I
F
−dl
F
dt
I
R
I
RM
Q
r
001aab912
time
time
V
FR
V
F
I
F
V
F
P1-P3P4-P6P7-P9P10-P11

BYC5X-600,127

Mfr. #:
Buy BYC5X-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Diode Ult Fast Recov Rectifier 600V 5A
Lifecycle:
New from this manufacturer.
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