BB202,135

IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BB202
Low-voltage variable capacitance diode
Rev. 02 — 3 January 2008 Product data sheet
NXP Semiconductors Product specification
Low-voltage variable capacitance diode BB202
FEATURES
Very steep C/V curve
C0.2: 30.5 pF; C2.3: 9.5 pF
C0.2 to C2.3 ratio: min. 2.5
Very low series resistance
Ultra small SMD plastic package.
APPLICATIONS
Electronic tuning in FM radio
Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB202 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD523 ultra
small SMD plastic package.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BB202 L2
PIN DESCRIPTION
1 cathode
2 anode
handbook, 2 columns
12
MBK441
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER MIN. MAX. UNIT
V
R
continuous reverse voltage 6V
I
F
continuous forward current 10 mA
T
stg
storage temperature 55 +85 °C
T
j
operating junction temperature 55 +85 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
R
reverse current V
R
= 6 V; see Fig.3 −−10 nA
V
R
=6V; T
j
=85°C; see
Fig 3
−−100 nA
r
s
diode series resistance f = 100 MHz; C = 30 pF 0.35 0.6
C
d
diode capacitance V
R
= 0.2; f = 1 MHz;
see Fig.2 and Fig.4
28.2 33.5 pF
V
R
= 2.3; f = 1 MHz;
see Fig.2 and Fig.4
7.2 11.2 pF
capacitance ratio f = 1 MHz 2.5 −−
C
d 0.2V()
C
d 2.3V()
--------------------
Rev. 02 - 3 January 2008
2 of 6
NXP Semiconductors Product specification
Low-voltage variable capacitance diode BB202
GRAPHICAL DATA
handbook, full pagewidth
0
40
10
30
20
MBL416
10
-1
1
C
d
(pF)
V
R
(V)
10
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
handbook, halfpage
100
T
j
(°C)
0 20 40 60
I
R
(nA)
80
10
3
10
2
10
1
MBL418
Fig.3 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
3
TC
d
(K
1)
10
−4
MBL417
10
1
110
V
R
(V)
Fig.4 Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
Rev. 02 - 3 January 2008
3 of 6

BB202,135

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Varactor Diodes TUNER DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet