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MGA-81563-TR1G

P1-P3P4-P6P7-P9P10-P11
MGA-81563
0.1–6 GHz 3 V, 14 dBm Amplier
Data Sheet
Features
x Lead-free Option Available
x
+14.8 dBm P
1dB
at 2.0 GHz
+17 dBm P
sat
at 2.0 GHz
x Single +3V Supply
x 2.8 dB Noise Figure at 2.0 GHz
x 12.4 dB Gain at 2.0 GHz
x Ultra-miniature Package
x Unconditionally Stable
Applications
x
Buer or Driver Amp for PCS, PHS, ISM, SATCOM and
WLL Applications
x
High Dynamic Range LNA
Simplied Schematic
Description
Avago’s MGA-81563 is an economical, easy-to-use GaAs
MMIC amplier that oers excellent power and low noise
gure for applications from 0.1 to 6 GHz. Packaged in
an ultra-miniature SOT-363 package, it requires half the
board space of a SOT-143 package.
The output of the amplier is matched to 50Ω (better
than 2.1:1 VSWR) across the entire bandwidth. The input is
partially matched to 50Ω (better than 2.5:1 VSWR) below
4 GHz and fully matched to 50Ω (better than 2:1 VSWR)
above. A simple series inductor can be added to the in-
put to improve the input match below 4 GHz. The ampli-
er allows a wide dynamic range by oering a 2.7 dB NF
coupled with a +27 dBm Output IP
3
.
The circuit uses state-of-the-art PHEMT technology
with proven reliability. On-chip bias circuitry allows op-
eration from a single +3 V power supply, while resistive
feedback ensures stability (K>1) over all frequencies and
temperatures.
Surface Mount Package: SOT-363 (SC-70)
INPUT
3
OUTPUT
and V
d
6
GND
BIAS
1, 2, 4, 5
BIAS
Pin Connections and Package Marking
OUTPUT
and V
d
GND
81x
GND
GND
INPUT
1
2
3
6
5
4 GND
Note: Package marking provides orientation and identication.
"81" = Device Code
"x" = Date code character identies month of manufacture
Attention:
Observe precautions for
handling electrostatic sensitive devices.
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
2
Thermal Resistance
[2]
:
T
ch-c
= 220°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. T
C
= 25°C (T
C
is dened to be the
temperature at the package pins where
contact is made to the circuit board.)
MGA-81563 Electrical Specications, TC = 25°C, ZO = 50 Ω, Vd = 3 V
Symbol Parameters and Test Conditions Units Min. Typ. Max. Std Dev
[2]
Gtest Gain in test circuit
[1]
f = 2.0 GHz 10.5 12.4 14.5 0.44
NFtest Noise Figure in test circuit
[1]
f = 2.0 GHz 2.8 3.8 0.21
NF50 Noise Figure in 50  system f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB 3.1
3.0
2.7
2.7
2.8
3.5
0.21
|S21|2 Gain in 50  system f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
= 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB 12.5
12.5
12.3
11.8
11.4
10.2
0.44
P
1 dB
Output Power at 1 dB Gain Compression f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dBm 15.1
14.8
14.8
14.8
14.8
14.7
0.86
IP
3
Output Third Order Intercept Point f = 2.0 GHz dBm +27 1.0
VSWR
in
Input VSWR f = 2.0 GHz 2.7:1
VSWR
out
Output VSWR f = 2.0 GHz 2.0:1
I
d
Device Current mA 31 42 51
Notes:
1. Guaranteed specications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization
of this product, and is intended to be used as an estimate for distribution of the typical specication.
MGA-81563 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V
d
Device Voltage, RF Output V 6.0
to Ground
V
gd
Device Voltage, Gate V -6.0
to Drain
V
in
Range of RF Input Voltage V +0.5 to -1.0
to Ground
P
in
CW RF Input Power dBm +13
T
ch
Channel Temperature °C 165
T
STG
Storage Temperature °C -65 to 150
3
MGA-81563 Typical Performance, T
C
= 25° C, V
d
= 3 V
034512 6 0 34512 6
FREQUENCY (GHz) FREQUENCY (GHz)
Figure 2. Noise Figure vs. Frequency and
Temperature.
T
A
= +85C
T
A
= +25C
T
A
= –40C
0
2
4
6
8
16
12
14
10
GAIN
(dB)
0
1
2
3
4
5
NOISE FIGURE
(dB)
T
A
= +85C
T
A
= +25C
T
A
= –40C
Figure 1. Power Gain vs. Frequency and
Temperature.
034512 6
FREQUENCY (GHz)
Figure 3. Output Power @ 1 dB Gain
Compression
P
1 dB
(dBm)
11
12
13
14
15
16
T
A
= +85C
T
A
= +25C
T
A
= –40C
0
1
2
3
4
5
034512 6
NOISE FIGURE
(dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Voltage.
V
d
= 2.7V
V
d
= 3.0V
V
d
= 3.3V
11
12
13
14
15
16
034512 6
FREQUENCY (GHz)
Figure 6. Output Power @ 1 dB Gain
Compression vs. Frequency and Voltage
P
1 dB
(dBm)
V
d
= 2.7V
V
d
= 3.0V
V
d
= 3.3V
0
2
4
6
8
16
12
14
10
034512 6
GAIN
(dB)
FREQUENCY (GHz)
Figure 4. Power Gain vs. Frequency and
Voltage.
V
d
= 2.7V
V
d
= 3.0V
V
d
= 3.3V
034512 6
VSWR (n:1)
FREQUENCY (GHz)
Figure 7. Input and Output VSWR vs.
Frequency.
1
1.5
2
3
2.5
4
3.5
034512
0
10
20
40
30
60
50
DEVICE CURRENT
(mA)
DEVICE VOLTAGE (V)
Figure 8. Device Current vs. Voltage and
Temperature.
FREQUENCY (GHz)
Figure 9. Minimum Noise Figure and
Associated Gain vs. Frequency.
GAIN and NF
(dB)
T
A
= +85C
T
A
= +25C
T
A
= -40C
NF
Gain
034512 6
0
2
4
6
8
16
12
14
10
Input
Output
P1-P3P4-P6P7-P9P10-P11

MGA-81563-TR1G

Mfr. #:
Buy MGA-81563-TR1G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 3 SV 12.4 dB
Lifecycle:
New from this manufacturer.
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