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NJVNJD35N04G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 5
1 Publication Order Number:
NJD35N04/D
NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
NPN Darlington Power
Transistor
This high voltage power Darlington has been specifically designed
for inductive applications such as Electronic Ignition, Switching
Regulators and Motor Control.
Features
Exceptional Safe Operating Area
High V
CE
; High Current Gain
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices*
Benefits
Reliable Performance at Higher Powers
Designed for Inductive Loads
Very Low Current Requirements
Applications
Internal Combustion Engine Ignition Control
Switching Regulators
Motor Controls
Light Ballast
Photo Flash
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO
350 Vdc
Collector−Base Breakdown Voltage V
CBO
700 Vdc
Collector−Emitter Breakdown Voltage V
CES
700 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current
Continuous
Peak
I
C
I
CM
4.0
8.0
Adc
Base Current I
B
0.5 Adc
Total Power Dissipation
@ T
C
= 25C
Derate above 25C
P
D
45
0.36
W
W/C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
DARLINGTON
POWER TRANSISTORS
4 AMPERES
350 VOLTS
45 WATTS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NJD35N04G DPAK
(Pb−Free)
75 Units / Rail
MARKING DIAGRAM
Y = Year
WW = Work Week
NJD35N04 = Device Code
G = Pb−Free Device
DPAK
CASE 369C
STYLE 1
YWW
NJD
35N04G
http://onsemi.com
NJVNJD35N04G DPAK
(Pb−Free)
NJD35N04T4G 2,500 /
Tape & Reel
DPAK
(Pb−Free)
75 Units / Rail
NJVNJD35N04T4G 2,500 /
Tape & Reel
DPAK
(Pb−Free)
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance
Junction−to−Case
Junction−to−Ambient
R
q
JC
R
q
JA
2.78
71.4
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 10 mA, L = 10 mH)
V
CEO(sus)
350 − −
V
Collector Cutoff Current (V
CE
= 500 V)
(I
B
= 0) (V
CE
= 500 V, T
C
= 125C)
I
CES
−
−
−
−
50
250
mA
Collector Cutoff Current (V
CE
= 250 V)
(I
B
= 0) (V
CE
= 200 V, T
C
= 125C)
I
CEO
−
−
−
−
50
250
mA
Emitter Cutoff Current (V
BE
= 5.0 Vdc) I
EBO
− − 5.0
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(I
C
= 2.0 A, I
B
= 20 mA)
(I
C
= 2.0 A, I
B
= 20 mA 125C)
V
CE(sat)
−
−
−
−
1.5
1.5
V
Base−Emitter Saturation Voltage
(I
C
= 2.0 A, I
B
= 20 mA)
(I
C
= 2.0 A, I
B
= 20 mA 125C)
V
BE(sat)
−
−
−
−
2.0
2.0
V
Base−Emitter On Voltage
(I
C
= 2.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V125C)
V
BE(on)
−
−
−
−
2.0
2.0
V
DC Current Gain
(I
C
= 2.0 A, V
CE
= 2.0 V)
(I
C
= 4.0 A, V
CE
= 2.0 Vdc)
h
FE
2000
300
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 2.0 A, V
CE
= 10 V, f = 1.0 MHz)
f
T
90 − −
MHz
Output Capacitance
(V
CB
= 10 V, I
E
= 0, f = 0.1 MHz)
C
ob
− 60 −
pF
SWITCHING CHARACTERISTICS
V
CC
= 12 V, V
clamp
= 250 V, L = 4 mH
I
C
= 2 A, I
B1
= 20 mA, I
B2
= −20 mA
t
s
t
f
−
−
18
0.8
−
−
mSec
2 KW
B
C
E
Figure 1. Darlington Circuit Schematic
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
25C
125C
10,000
0.1 1.0 10
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
V
CE
= 2 V
1000
100
10
4.0
0.1 1.0 10
I
C
, COLLECTOR CURRENT (AMPS)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
c
/I
b
= 100
3.0
2.5
1.0
0.5
0
20
50
10 30 50 170
T, TEMPERATURE (C)
P
D
, POWER DISSIPATION (W)
0
Figure 2. Power Derating Figure 3. DC Current Gain
Figure 4. Collector−Emitter Saturation Voltage Figure 5. Base−Emitter Saturation Voltage
T
C
25C
125C
2.4
0.1 1.0 10
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(sat)
, BASE−EMITTER SATURATION
VOLTAGE (V)
2.0
1.6
1.2
0.8
0
0.4
2.0
0.1 1.0 10
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.6
0.8
1.2
0.4
Figure 6. Base−Emitter Voltage Figure 7. Forward Bias Safe Operating Area
(FBSOA)
10
10 100 1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1.0
0.1
0.01
70 90 110 130 150
15
45
10
40
5.0
35
30
25
2.0
1.5
3.5
25C
125C
I
c
/I
b
= 100
25C
125C
300 mS
1 mS
10 mS
DC
100 mS
V
CE
= 2 V
P1-P3P4-P4

NJVNJD35N04G

Mfr. #:
Buy NJVNJD35N04G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors Pwr DARLINGTON TRANSIST
Lifecycle:
New from this manufacturer.
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