IRF7726TRPBF Datasheet IRF7726TRPBF | P1-P3

HEXFET

®

Power MOSFET

02/22/05

IRF7726PbF

Absolute Maximum Ratings

www.irf.com 1

Thermal Resistance

Parameter Max. Units

V

DS

Drain-Source Voltage -30 V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ -10V -7.0

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ -10V -5.7 A

I

DM

Pulsed Drain Current -28

P

D

@T

A

= 25°C Maximum Power Dissipation 1.79 W

P

D

@T

A

= 70°C Maximum Power Dissipation 1.14 W

Linear Derating Factor 0.01 W/°C

V

GS

Gate-to-Source Voltage ±20 V

T

J

, T

STG

Junction and Storage Temperature Range -55 to +150 °C

PD -95992

V

DSS

R

DS(on)

max I

D

-30V 0.026@V

GS

= -10V -7.0A

0.040@V

GS

= -4.5V -6.0A

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 70 °C/W

MICRO-8

Description

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile (< 1.2mm)

l Available in Tape & Reel

l Lead-Free

HEXFET

®

Power MOSFETs from International Recti-

fier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the ruggedized device design,

that International Rectifier is well known for, provides

the designer with an extremely efficient and reliable

device for battery and load management.

The new Micro8 package, with half the footprint area

of the standard SO-8, provides the smallest footprint

available in an SOIC outline. This makes the Micro8

an ideal device for applications where printed circuit

board space is at a premium. The low profile (<1.2mm)

of the Micro8 will allow it to fit easily into extremely thin

application environments such as portable electronics

and PCMCIA cards.

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

D

S

IRF7726PbF

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode) showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode)  p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– -1.2 V T

J

= 25°C, I

S

= -1.8A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 35 53 ns T

J

= 25°C, I

F

= -1.8A

Q

rr

Reverse Recovery Charge ––– 32 48 µC di/dt = -100A/µs



Source-Drain Ratings and Characteristics

 



-28

-1.8

A

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage -30 ––– ––– V V

GS

= 0V, I

D

= -250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, I

D

= -1mA

––– ––– 0.026 V

GS

= -10V, I

D

= -7.0A 

 ––– 0.040 V

GS

= -4.5V, I

D

= -6.0A 

V

GS(th)

Gate Threshold Voltage -1.0 ––– -2.5 V V

DS

= V

GS

, I

D

= -250µA

g

fs

Forward Transconductance 10 ––– ––– S V

DS

= -10V, I

D

= -7.0A

––– ––– -15 V

DS

= -24V, V

GS

= 0V

––– ––– -25 V

DS

= -24V, V

GS

= 0V, T

J

= 70°C

Gate-to-Source Forward Leakage ––– ––– -100 V

GS

= -20V

Gate-to-Source Reverse Leakage ––– ––– 100 V

GS

= 20V

Q

g

Total Gate Charge ––– 46 69 I

D

= -7.0A

Q

gs

Gate-to-Source Charge ––– 8.0 ––– nC V

DS

= -15V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 8.1 ––– V

GS

= -10V

t

d(on)

Turn-On Delay Time ––– 15 23 V

DD

= -15V, V

GS

= -10V

t

r

Rise Time ––– 25 38 I

D

= -1.0A

t

d(off)

Turn-Off Delay Time ––– 227 341 R

G

= 6.0Ω

t

f

Fall Time ––– 107 161 R

D

= 15Ω 

C

iss

Input Capacitance ––– 2204 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 341 ––– pF V

DS

= -25V

C

rss

Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

I

GSS

µA

Ω

R

DS(on)

Static Drain-to-Source On-Resistance

I

DSS

Drain-to-Source Leakage Current

nA

ns

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

S

D

G

 When mounted on 1 inch square copper board, t < 10 sec.

IRF7726PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

-10V

-7.0A

0.1

1

10

100

2.0 3.0 4.0 5.0 6.0

V = -15V

20µs PULSE WIDTH

DS

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

GS

D

T = 150 C

J

°

T = 25 C

J

°

0.1 1 10 100

-V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

-2.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM -2.5V

0.1 1 10 100

-V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

-2.5V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM -2.5V

IRF7726TRPBF

IRF7726TRPBF

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