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FDQ7236AS

P1-P3P4-P6P7-P9
©2011 Fairchild Semiconductor Corporation
FDQ7236AS Rev C
FDQ7236AS
Dual Notebook Power Supply N-Channel PowerTrench
®
in SO-14 Package
General Description
The FDQ7236AS is designed to replace two single SO-
8 MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET
TM
technology. The FDQ7236AS
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode.
Features
• Q2: 14 A, 30V. R
DS(on)
= 8.7 mΩ @ V
GS
= 10V
R
DS(on)
= 10.5 mΩ @ V
GS
= 4.5V
• Q1: 11 A, 30V. R
DS(on)
= 13.2 mΩ @ V
GS
= 10V
R
DS(on)
= 16 mΩ @ V
GS
= 4.5V
SO-14
G1
G2
Vin
S2
S2
S2
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter Q2 Q1 Units
V
DSS
Drain-Source Voltage 30 30 V
V
GSS
Gate-Source Voltage
±20 ±20
V
14 11 I
D
Drain Current - Continuous (Note 1a)
- Pulsed
50 50
A
2.4 1.8 P
D
Power Dissipation for Single Operation (Note 1a & 1b)
(Note 1c & 1d)
1.3 1.1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
−55 to +150 °C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68
R
θJA
(Note 1c & 1d)
94 118
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDQ7236AS FDQ7236AS 13” 16mm 2500 units
FDQ7236AS
pin 1
January 2011
FDQ7236AS Rev C
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 µA
Q2
Q1
30
30
V
∆BVDSS
∆T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25°C
I
D
= 250 µA, Referenced to 25°C
Q2
Q1
25
24
mV/°C
V
DS
= 24 V, V
GS
= 0 V Q2
Q1
500
1
µA
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V,
T
J
= 125°C
Q2
Q1
5.6
40
mA
µA
I
GSS
Gate-Body Leakage
V
GS
= ±20 V, V
DS
= 0 V
ALL
±100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
Q2
Q1
1
1
1.8
1.7
3
3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25°C
I
D
= 250 µA, Referenced to 25°C
Q2
Q1
−3
−4
mV/°C
V
GS
= 10 V, I
D
= 14 A
V
GS
= 4.5 V, I
D
= 13 A
V
GS
= 10 V, I
D
= 14A, T
J
= 125°C
Q2
7.2
8.7
10
8.7
10.5
12.5
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 11 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 11, T
J
= 125°C
Q1 11
13
15
13.2
16
19
mΩ
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V
V
GS
= 10 V, V
DS
= 5 V
Q2
Q1
50
50
A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 14 A
V
DS
= 10 V, I
D
= 11 A
Q2
Q1
58
43
S
Dynamic Characteristics
C
iss
Input Capacitance Q2
Q1
1530
920
pF
C
oss
Output Capacitance Q2
Q1
440
190
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Q2
Q1
160
120
pF
R
g
Gate Resistance V
GS
= 15mV, f = 1.0 MHz Q2
Q1
1.9
1.9
Ω
FDQ7236AS
FDQ7236AS Rev C
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Switching Characteristics (Note 2)
t
d(on)
Turn-On Delay Time
Q2
Q1
12
9
21
18
ns
t
r
Turn-On Rise Time
Q2
Q1
13
5
23
10
ns
t
d(off)
Turn-Off Delay Time
Q2
Q1
30
27
49
43
ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6 Ω
Q2
Q1
19
4
35
8
ns
t
d(on)
Turn-On Delay Time
Q2
Q1
17
11
30
20
ns
t
r
Turn-On Rise Time
Q2
Q1
18
15
32
26
ns
t
d(off)
Turn-Off Delay Time
Q2
Q1
28
16
44
29
ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 4.5V, R
GEN
= 6 Ω
Q2
Q1
13
9
23
18
ns
Q
g(TOT)
Total Gate Charge, V
GS
= 10V
Q2
Q1
28
17
39
24
nC
Q
g(TOT)
Total Gate Charge, V
GS
= 5V
Q2
Q1
15
9
21
19
nC
Q
gs
Gate-Source Charge
Q2
Q1
4.1
2.7
nC
Q
gd
Gate-Drain Charge
Q2
V
DS
= 15 V, I
D
= 14A
Q1
V
DS
= 15 V, I
D
= 11A
Q2
Q1
4.9
3.3
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current Q2
Q1
3.4
2.1
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.4 A (Note 2)
V
GS
= 0 V, I
S
= 1.9 A (Note 2)
V
GS
= 0 V, I
S
= 2.1 A (Note 2)
Q2
Q1
0.5
0.4
0.7
0.7
1.2
V
t
rr
Diode Reverse Recovery Time 22 ns
Q
rr
Diode Reverse Recovery Charge
I
F
= 14A
dI
F
/dt = 300 A/µs
Q2
15 nC
t
rr
Diode Reverse Recovery Time 16 ns
Q
rr
Diode Reverse Recovery Charge
I
F
= 11A
dI
F
/dt = 100 A/µs
Q1
5 nC
NOTE :
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3
4
a) 68°C/W when
mounted on a 1in
2
pad
of 2 oz copper (Q1).
b) 52°C/W when
mounted on a 1in
2
pad
of 2 oz copper (Q2).
c) 118°C/W when mounted
on a minimum pad of 2 oz
copper (Q1).
d) 94°C/W when mounted on
a minimum pad of 2 oz
copper (Q2).
FDQ7236AS
P1-P3P4-P6P7-P9

FDQ7236AS

Mfr. #:
Buy FDQ7236AS
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V Dual NCh PwrTren
Lifecycle:
New from this manufacturer.
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