- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
SYMBOL UNIT
P
TOT
mW
I
C
mA
I
CM
mA
T
J
, T
STG
°C
SYMBOL UNIT
Collector Base Cutoff Current
V
CB
=50V
V
CB
=30V
V
CE(sat)
V
V
BE(on)
V
f
T
MHz
C
ob
pF
V
CE
= 5V,
I
C
= 300mA
Document Number: DS_S1407004
60
V
h
FE
-
I
CBO
- 100
urrent Gain Group: -16
-25
-40DC Current Gain
-0.7
Base Emitter On Voltage -
Collector Emitter Saturation Voltage
BC337
BC338
BC337
BC338
- These types are subdivided into three groups -16, -25 and -40, according to their current gain
BC337
nA
Transition Frequency 100 -
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA,
f=50MHz
V
V
Collector-Emitter Breakdown Voltage
I
C
= 2mA
V
CB
=10V, f=1MHz
- For switching and AF amplifier applications
Taiwan Semiconducto
VALUE
Small Signal Product
NPN Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
TO-92
PARAMETER
BC337-16/25/40 thru BC338-16/25/40
MECHANICAL DATA
BC338
FEATURES
Total Power dissipation 625
V
CBO
Collector-Base Voltage V
V
1000
45
25
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
Peak Collector Current
Collector Current
25
BC337
BC337
BC338
BC337
BC338
V
V
50
30
45
Junction and Storage Temperature Range
800
-55 to +150
5
5
V
EBO
PARAMETER
Collector-Base Breakdown Voltage
I
C
= 100μA
50
30
Output Capacitance
V
(BR)CBO
Emitter-Base Breakdown Voltage
5
5
V
(BR)CEO
V
(BR)EBO
BC337
BC338
-
Version: B14
V
CE
= 5V,
I
C
= 100mA
1.2
I
C
=500mA, I
B
=50mA
BC338
400
630
160
250
MIN
-
12
100
MAX
-
-
-
100
250
I
E
= 100μA
