IXTP1R6N50D2

IXTY1R6N50D2 IXTA1R6N50D2

IXTP1R6N50D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Normalized R

DS(on)

vs. Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 0V

I

D

= 0.8A

Fig. 8. R

DS(on)

Normalized to I

D

= 0.8A Value

vs. Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0123456

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 0V

5V

- - - -

T

J

= 125ºC

T

J

= 25ºC

Fig. 9. Input Admittance

0

1

2

3

4

5

6

-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

V

DS

= 30V

Fig. 10. Transconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0123456

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

V

DS

= 30V

Fig. 12. Forward Voltage Drop of

Intrinsic Diode

0

1

2

3

4

5

0.3 0.4 0.5 0.6 0.7 0.8 0.9

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

V

GS

= -10V

T

J

= 25ºC

Fig. 11. Breakdown and Threshold Voltages

vs. Junction Temperature

0.8

0.9

1.0

1.1

1.2

1.3

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

BV / V

GS(off)

- Normalized

V

GS(off)

@ V

DS

= 25V

BV

DSX

@ V

GS

= - 5V

© 2009 IXYS CORPORATION, All Rights Reserved

IXYS REF: T_1R6N50D2(2C)8-14-09

IXTY1R6N50D2 IXTA1R6N50D2

IXTP1R6N50D2

Fig. 17. Maximum Transient Thermal Impedance

0.01

0.10

1.00

10.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse W idth - Seconds

Z

(th)JC

- ºC / W

Fig. 17. Maximum Transient Thermal Resistance

2.00

Fig. 14. Gate Charge

-5

-4

-3

-2

-1

0

1

2

3

4

5

0 5 10 15 20 25

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 250V

I

D

= 0.8A

I

G

= 10mA

Fig. 13. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

C

iss

C

rss

C

oss

Fig. 15. Forward-Bias Safe Operating Area

@ T

C

= 25ºC

0.1

1.0

10.0

10 100 1,000

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

1ms

100µs

R

DS(on)

Limit

10ms

100ms

DC

Fig. 16. Forward-Bias Safe Operating Area

@ T

C

= 75ºC

0.1

1.0

10.0

10 100 1,000

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 75ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

100ms

DC

IXTP1R6N50D2

Mfr. #:

Buy IXTP1R6N50D2

Manufacturer:

Littelfuse

Description:

MOSFET N-CH MOSFETS (D2) 500V 1.6A

Lifecycle:

New from this manufacturer.

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