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BSS138DW-7-F

P1-P3P4-P6
BSS138DW
Document number: DS30203 Rev. 13 - 2
1 of 6
www.diodes.com
January 2014
© Diodes Incorporated
BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
50V
3.5Ω @ V
GS
= 10V
200mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
BSS138DW-7-F SOT-363 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019
Code S T U V W X Y Z A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-363
TOP VIEW
K38
K38
YM
YM
S
1
D
1
D
2
S
2
G
1
G
2
TOP VIEW
Internal Schematic
K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
K38
K38
YM
YM
BSS138DW
Document number: DS30203 Rev. 13 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
BSS138DW
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol BSS138DW Units
Drain-Source Voltage
V
DSS
50 V
Drain-Gate Voltage (Note 7)
V
DGR
50 V
Gate-Source Voltage Continuous
V
GSS
20
V
Drain Current (Note 5) Continuous
I
D
200 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol BSS138DW Units
Total Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient
R
θJA
625
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
50 75
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
0.5 µA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
0.5 1.2 1.5 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS
(
ON
)
1.4 3.5 Ω
V
GS
= 10V, I
D
= 0.22A
Forward Transconductance
g
FS
100
mS
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50 pF
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
25 pF
Reverse Transfer Capacitance
C
rss
8.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D
(
ON
)
20 ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50Ω
Turn-Off Delay Time
t
D
(
OFF
)
20 ns
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
7. R
GS
20K.
BSS138DW
Document number: DS30203 Rev. 13 - 2
3 of 6
www.diodes.com
January 2014
© Diodes Incorporated
BSS138DW
0
0.1
0.2
0.3
0.4
0.5
0.6
1
0
3
2
54
7
68
910
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25 C
j
°
V = 3.5V
GS
V = 3.25V
GS
V = 3.0V
GS
V = 2.75V
GS
V = 2.5V
GS
0
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
GS
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
011.50.5 2 3.5 4 4.52.5
3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
D
-55 C
°
150 C
°
25 C
°
V = 1V
DS
0.65
T , JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55
-5
45
95
145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-55 -25
50 10075
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
T , JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
j
125
250
150
0
I , DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
4
5
6
7
8
0
0.02 0.04 0.06
0.08
0.16
0.14
0.120.1
150 C
°
-55 C
°
25 C
°
V = 2.5V
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
I , DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
5
4
6
7
8
9
0
0.05
0.1
0.2
0.15
0.25
150 C
°
-55 C
°
25 C
°
V = 2.75V
GS
R
,
D
R
A
I
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
P1-P3P4-P6

BSS138DW-7-F

Mfr. #:
Buy BSS138DW-7-F
Manufacturer:
Diodes Incorporated
Description:
MOSFET 50V 200mW
Lifecycle:
New from this manufacturer.
Delivery:
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