LTC4413
7
4413fd
For more information www.linear.com/LTC4413
block DiagraM
Figure 1
+
+
1 10
+
OVER CURRENT
INA OUTA
9
STAT
2
ENBA
3µA
+
PA
V
GATEA
V
OFF
ENA
AENA
A
AENA
OVER TEMP
BENA
OVER TEMP
STB
9µA
UVLO
ENA
ENB
OUTA (MAX)
OUTB (MAX)
O.5V
+
+
+
5 6
+
OVER CURRENT
INB
3
GND
OUTB
4413 F01
4
ENBB
3µA
+
PB
V
GATEB
V
OFF
ENB
BENA
B
O.5V
+
LTC4413
8
4413fd
For more information www.linear.com/LTC4413
operaTion
The LTC4413 is described with the aid of the Block Diagram
(Figure 1). Operation begins when the power source at
V
INA
or V
INB
rises above the undervoltage lockout (UVLO)
voltage of 2.4V and either of the ENBA or ENBB control
pins is low. If only the voltage at the V
INA
pin is present, the
power source to the LTC4413 (V
DD
) will be supplied from
the V
INA
pin. The amplifier (A) pulls a current proportional
to the difference between V
INA
and V
OUTA
from the gate
(V
GATEA
) of the internal PFET (PA), driving this gate voltage
below V
INA
. This turns on PA. As V
OUTA
is pulled up to
a forward voltage drop (V
FWD
) of 20mV below V
INA
, the
LTC4413 regulates V
GATEA
to maintain the small forward
voltage drop. The system is now in forward regulation and
the load at V
OUTA
is powered from the supply at V
INA
. As
the load current varies, V
GATEA
is controlled to maintain
V
FWD
until the load current exceeds the transistors (PA)
ability to deliver the current as V
GATEA
approaches GND.
At this point the PFET behaves as a fixed resistor with
resistance R
ON
, whereby the forward voltage increases
slightly with increased load current. As the magnitude of
I
OUT
increases further (such that I
LOAD
> I
OC
), the LTC4413
fixes the load current to the constant value I
OC
to protect
the device. The characteristics for parameters R
FWD
,
R
ON
, V
FWD
and I
OC
are specified with the aid of Figure 2,
illustrating the LTC4413 forward voltage drop versus that
of a Schottky diode.
If another supply is provided at V
INB
, the LTC4413 likewise
regulates the gate voltage on PB to maintain the output
voltage V
OUTB
just below the input voltage V
INB
. If this
alternate supply, V
INB
, exceeds the voltage at V
INA
, the
LTC4413 selects this input voltage as the internal supply
(V
DD
). This second ideal diode operates independently of
the first ideal diode function.
When an alternate power source is connected to the load
at V
OUTA
(or V
OUTB
), the LTC4413 senses the increased
voltage at V
OUTA
and amplifier A increases the voltage
V
GATEA
, reducing the current through PA. When V
OUTA
is
higher than V
INA
+ V
RTO
, V
GATEA
is pulled up to V
DD
, which
turns off PA. The internal power source for the LTC4413
(V
DD
) is then diverted to source current from the V
OUTA
pin,
only if V
OUTA
is larger than V
INB
(or V
OUTB
). The system
is now in the reverse turn-off mode. Power to the load is
being delivered from an alternate supply and only a small
current is drawn from V
INA
to sense the potential at V
INA
.
When the selected channel of the LTC4413 is in reverse
turn-off mode or both channels are disabled, the STAT pin
sinks 9µA of current (I
SON
) if connected.
Channel selection is accomplished using the two ENB pins,
ENBA and ENBB. For example with channel A, when the
ENBA input is asserted (high), PAs gate voltage is pulled
to V
DD
at a controlled rate, limiting the turn-off time to
avoid voltage spiking at the input when being driven by an
inductive source impedance. A 3µA pull-down current on
the ENBA, ENBB pins ensures a low level at these inputs
if left floating.
Slow Response Time
The LTC4413-1 (or LTC4413-2) is recommended for
applications with demanding load step or fast slew rate
requirements. The LTC4413-1 and LTC4413-2 provide bet
-
ter load regulation in these environments at the expense
of higher quiescent current. The LTC4413 is optimized
for lower power consumption and should not be used in
high slew rate environments or when large and fast load
transients are anticipated.
Overcurrent and Short-Circuit Protection
During an overcurrent condition, the output voltage droops
as the load current exceeds the amount of current that
the LTC4413 can supply. At the time when an overcurrent
condition is first detected, the LTC4413 takes some time to
Figure 2
FORWARD VOLTAGE (V)
0
0
CURRENT (A)
I
FWD
I
OC
SLOPE
1/R
ON
SLOPE
1/R
FWD
LTC4413
SCHOTTKY
DIODE
4413 F02
LTC4413
9
4413fd
For more information www.linear.com/LTC4413
applicaTions inForMaTion
detect this condition before reducing the current to I
MAX
.
For short durations after the output is shorted, the
current may exceed I
MAX
. The magnitude of this peak
short-circuit current can be large, depending on the load
current immediately before the short circuit occurs. During
overcurrent operation, the power consumption of the
LTC4413 is large, and is likely to cause an overtemperature
condition as the internal die temperature exceeds the
thermal shutdown temperature.
Overtemperature Protection
The overtemperature condition is detected when the
internal die temperature increases beyond 150°C. An
overtemperature condition causes the gate amplifiers (A
and B) as well as the two P-channel MOSFETs (PA and
PB) to be shut off. When the internal die temperature
cools to below 140°C, the amplifiers turn on and revert
to normal operation. Note that prolonged operation under
overtemperature conditions degrades reliability.
Channel Selection and Status Output
Two active-high control pins independently turn off the
two ideal diodes contained within the LTC4413, control
-
ling the operation mode as described by Table 1. When
the selected channel is reverse biased, or the LTC4413 is
put into low power standby, the status signal indicates
this condition with a low voltage.
Table 1. Mode Control
ENBA ENBB STATE
Low Low Diode OR (NB: The Two Outputs Are Not Connected
Internal to the Device)
Low High Diode A = Enabled, Diode B = Disabled
High Low Diode A = Disabled, Diode B = Enabled
High High All 0ff (Low Power Standby)
The function of the STAT pin depends on the mode that
has been selected. The following table describes the STAT
pin output current as a function of the mode selected, as
well as the conduction state of the two diodes.
Table 2. STAT Output Pin Funtion
ENBA ENBB CONDITIONS STAT
Low Low Diode A Forward Bias,
Diode B Forward Bias
I
SNK
= 0µA
Diode A Forward Bias,
Diode B Reverse Bias
I
SNK
= 0µA
Diode A Reverse Bias,
Diode B Forward Bias
I
SNK
= 9µA
Diode A Reverse Bias,
Diode B Reverse Bias
I
SNK
= 9µA
Low High Diode A Forward Bias,
Diode B Disabled
I
SNK
= 0µA
Diode A Reverse Bias,
Diode B Disabled
I
SNK
= 9µA
High Low Diode A Disabled,
Diode B Forward Bias
I
SNK
= 0µA
Diode A Disabled
Diode B Reverse Bias
I
SNK
= 9µA
High High Diode A Disabled,
Diode B Disabled
I
SNK
= 9µA
Introduction
The LTC4413 is intended for power control applications
that include low loss diode ORing, fully automatic
switchover from a primary to an auxiliary source of power,
microcontroller controlled switchover from a primary to
an auxiliary source of power, load sharing between two or
more batteries, charging of multiple batteries from a single
charger and high side power switching. The LTC4413 is
optimized for low quiescent power consumption at the
expense of transient response. For more demanding slew
rate or load transient applications, the pin compatible
LTC4413-1 is recommended.
Dual Battery Load Sharing with Automatic Switchover
to a Wall Adapter
An application circuit for dual battery load sharing with
automatic switchover of load from batteries to a wall adapter
is shown in Figure 3. When the wall adapter is not present,
whichever battery that has the higher voltage provides the
load current until it has discharged to the voltage of the
other battery. The load is then shared between the two
operaTion

LTC4413EDD#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Power Management Specialized - PMIC Dual Ideal Diodes (Diode ORing) in Lead Free
Lifecycle:
New from this manufacturer.
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