LTC4413
1
4413fd
For more information www.linear.com/LTC4413
Typical applicaTion
DescripTion
Dual 2.6A, 2.5V to 5.5V,
Ideal Diodes in 3mm
×
3mm DFN
The LT C
®
4413 contains two monolithic ideal diodes,
each capable of supplying up to 2.6A from input voltages
between 2.5V and 5.5V. Each ideal diode uses a 100mΩ
P-channel MOSFET that independently connects INA to
OUTA and INB to OUTB. During normal forward operation
the voltage drop across each of these diodes is regulated
to as low as 28mV. Quiescent current is less than 40µA
for diode currents up to 1A. If either of the output voltages
exceeds its respective input voltages, that MOSFET is
turned off and less than 1µA of reverse current will flow
from OUT to IN. Maximum forward current in each MOSFET
is limited to a constant 2.6A and internal thermal limiting
circuits protect the part during fault conditions.
Two active-high control pins independently turn off the
two ideal diodes contained within the LTC4413, control
-
ling the operation mode as described by Table 1. When
the selected channel is reverse biased, or the LTC4413 is
put into low power standby, a status signal indicates this
condition with a low voltage.
A 9µA open-drain STAT pin is used to indicate conduction
status. When terminated to a positive supply through a
470k resistor, the STAT pin can be used to indicate that the
selected diode is conducting with a high voltage. This signal
can also be used to drive an auxiliary P-channel MOSFET
power switch to control a third alternate power source
when the LTC4413 is not conducting forward current.
The LTC4413 is housed in a 10-lead DFN package.
LTC4413 vs 1N5817 Schottky
FeaTures
applicaTions
n
2-Channel Ideal Diode ORing or Load Sharing
n
Low Loss Replacement for ORing Diodes
n
Low Forward On-Resistance (100mΩ Max at 3.6V)
n
Low Reverse Leakage Current (1µA Max)
n
Small Regulated Forward Voltage (28mV Typ)
n
2.5V to 5.5V Operating Range
n
2.6A Maximum Forward Current
n
Internal Current Limit and Thermal Protection
n
Slow Turn-On/Off to Protect Against Inductive
Source Impedance-Induced Voltage Spiking
n
Ultralow Quiescent Current Consumption, Low
Power Alternative to the LTC4413-1
n
Status Output to Indicate if Selected Channel is
Conducting
n
Programmable Channel On/Off
n
Low Profile (0.75mm) 10-Lead 3mm × 3mm DFN
Package
n
Battery and Wall Adapter Diode ORing in Handheld
Products
n
Backup Battery Diode ORing
n
Power Switching
n
USB Peripherals
n
Uninterruptable Supplies
V
FWD
(mV)
0
I
OUT
(mA)
1000
1500
400
4413 TA01b
500
0
100
200
300
2000
LTC4413
1N5817
ENBA
GND
ENBB
470k
V
CC
INA
BAT
10µF
4.7µF
4413 TA01
TO LOAD
STAT IS HIGH WHEN
BAT IS SUPPLYING
LOAD CURRENT
WALL
ADAPTER
(0V TO 5.5V)
OUTA
INB OUTB
STAT
CONTROL CIRCUIT
LTC4413
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and
ThinSOT and PowerPath are trademarks of Linear Technology Corporation. All other trademarks
are the property of their respective owners.
LTC4413
2
4413fd
For more information www.linear.com/LTC4413
absoluTe MaxiMuM raTings
INA, INB, OUTA, OUTB, STAT,
ENBA, ENBB Voltage .................................... 0.3V to 6V
Operating Temperature Range..................40°C to 85°C
Storage Temperature Range ...................65°C to 125°C
Junction Temperature (Note 4) ............................. 125°C
Continuous Power Dissipation
(Derate 25mW/°C Above 70°C) .........................1500mW
(Note 1)
TOP VIEW
11
DD PACKAGE
10-LEAD (3mm × 3mm) PLASTIC DFN
10
9
6
7
8
4
5
3
2
1
OUTA
STAT
NC
NC
OUTB
INA
ENBA
GND
ENBB
INB
T
JMAX
= 125°C, θ
JA
= 40°C/W (4-LAYER PCB)
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. (Notes 2, 6)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
IN
, V
OUT
Operating Supply Range for Channel A or B V
IN
and/or V
OUT
Must Be in This Range
for Proper Operation
l
2.5 5.5 V
UVLO UVLO Turn-On Rising Threshold Max (V
INA
, V
INB
, V
OUTA
, V
OUTB
)
l
2.4 V
UVLO Turn-Off Falling Threshold Max (V
INA
, V
INB
, V
OUTA
, V
OUTB
)
l
1.7 V
I
QF
Quiescent Current in Forward Regulation (Note 3) V
INA
= 3.6V, I
OUTA
= –100mA, V
INB
= 0V,
I
OUTB
= 0mA
l
25 40 µA
I
QRIN
Quiescent Current While in Reverse
Turn-Off, Current Drawn from V
IN
V
IN
= 3.6V, V
OUT
= 5.5V (Note 6)
l
–1 0.5 2 µA
I
QRGND
Quiescent Current While in Reverse Turn-Off,
Measured Via GND
V
INA
= V
INB
= V
OUTB
= 0V, V
OUTA
= 5.5V,
V
STAT
= 0V
22 30 µA
I
QROUTA
Quiescent Current While in Reverse Turn-Off,
Current Drawn from V
OUTA
When OUTA
Supplies Chip Power
V
INA
= V
INB
= V
OUTB
= 0V, V
OUTA
= 5.5V
l
17 31 µA
I
QROUTB
Quiescent Current While in Reverse Turn-Off,
Current Drawn from V
OUTA
When OUTB
Supplies Chip Power
V
INA
= V
INB
= 0V, V
OUTA
< V
OUTB
= 5.5V
l
2 3 µA
I
QOFF
Quiescent Current with Both ENBA
and ENBB High
V
INA
= V
INB
= 3.6V, V
ENBA
and
V
ENBB
High, V
STAT
= 0V
l
20 31 µA
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LTC4413EDD#PBF LTC4413EDD#TRPBF LBGN
10-Lead (3mm × 3mm) Plastic DFN
40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
pin conFiguraTion
orDer inForMaTion
LTC4413
3
4413fd
For more information www.linear.com/LTC4413
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4413 is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: Quiescent current increases with diode current, refer to plot of I
QF
vs I
OUT
.
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions.
Overtemperature protection will become active at a junction temperature
greater than the maximum operating temperature. Continuous operation
above the specified maximum operating junction temperature may impair
device reliability.
Note 5: This specification is guaranteed by correlation to wafer-level
measurements.
Note 6: Unless otherwise specified, current into a pin is positive and
current out of a pin is negative. All voltages referenced to GND.
Note 7: Guaranteed by design.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I
LEAK
V
INA
or V
INB
Current When V
OUTA
or V
OUTB
Supplies Power
V
IN
= 0V, V
OUT
= 5.5V –1 1 µA
V
RTO
Reverse Turn-Off Voltage (V
OUT
– V
IN
) V
IN
= 3.6V –5 10 mV
V
FWD
Forward Voltage Drop (V
IN
– V
OUT
)
at I
OUT
= –1mA
V
IN
= 3.6V
l
28 38 mV
R
FWD
On-Resistance, R
FWD
Regulation
(Measured as ∆V/∆I)
V
IN
= 3.6V, I
OUT
= –100mA to –500mA
(Note 5)
100 140
R
ON
On-Resistance, R
ON
Regulation
(Measured as V/I at I
IN
= 1A)
V
IN
= 3.6V, I
OUT
= –1.0A (Note 5) 140 200
t
ON
PowerPath™ Turn-On Time V
IN
= 3.6V, from ENBA, ENBB Falling to I
IN
Ramp Starting (Note 7)
50 µs
t
OFF
PowerPath Turn-Off Time V
IN
= 3.6V, I
OUT
= –100mA (Note 7) 4 µs
Short-Circuit Response
I
OC
Current Limit V
INX
= 3.6V (Notes 4, 5) 1.8 A
I
QOC
Quiescent Current While in
Overcurrent Operation
V
INX
= 3.6V, I
OUT
= 1.9A (Notes 4, 5) 150 300 µA
STAT Output
I
SOFF
STAT Off Current Shutdown
l
–1 0 1 µA
I
SON
STAT Sink Current V
IN
> V
OUT
, V
ENBA
< V
ENBIL
, V
ENBB
< V
ENBIL
,
I
OUT
< I
MAX
7 9 17 µA
t
S(ON)
STAT Pin Turn-On Time 1 µs
t
S(OFF)
STAT Pin Turn-Off Time 1 µs
ENB Inputs
V
ENBIH
ENBA, ENBB Inputs Rising Threshold Voltage V
ENBA
, V
ENBB
Rising
l
540 600 mV
V
ENBIL
ENBA, ENBB Inputs Falling Threshold Voltage V
ENBA
, V
ENBB
Falling
l
400 460 mV
V
ENBHYST
ENBA, ENBB Inputs Hysteresis V
ENBHYST
= (V
ENBIH
– V
ENBIL
) 90 mV
I
ENB
ENBA, ENBB Inputs Pull-Down Current V
OUT
< V
IN
= 3.6V, V
ENBA
> V
ENBIL,
V
ENBB
> V
ENBIL
l
1.5 3 4.5 µA
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. (Notes 2, 6)

LTC4413EDD#TRPBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Power Management Specialized - PMIC Dual Ideal Diodes (Diode ORing) in Lead Free
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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