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NTD23N03RT4

P1-P3P4-P6P7-P7
NTD23N03R
http://onsemi.com
4
100
10
1
8
6
4
2
0
10
6
8
4
0
10 10
400
155020
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
C, CAPACITANCE (pF)
300
200
100
0
5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
0 3.5 4.52.51.50.5
1 10 100 0 0.40.2 0.8 1.0
I
D
= 6 A
T
J
= 25°C
V
GS
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
2
0.6
Q
2
C
iss
V
DS
= 10 V
I
D
= 6 A
V
GS
= 10 V
V
GS
= 0 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
V
DS
Q
1
Q
T
T
J
= 25°C
T
J
= 150°C
3.0 4.02.01.0
100
10
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
1 10 100
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
0.1
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
100 ms
1 ms
10 ms
dc
NTD23N03R
http://onsemi.com
5
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Figure 12. Thermal Response
t, TIME (s)
10
1
0.00001 0.001 0.01 0.1 100.0001 1
0.1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.01
ORDERING INFORMATION
Device Package Shipping
†
NTD23N03RG DPAK
(Pb−Free)
75 Units/Rail
NTD23N03R−1G DPAK−3
(Pb−Free)
75 Units/Rail
NTD23N03RT4 DPAK 2500 Tape & Reel
NTD23N03RT4G DPAK
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD23N03R
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE O
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
D
A
B
R
V
S
F
L
2 PL
M
0.13 (0.005) T
E
C
U
J
−T−
SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.025 0.035 0.63 0.89
E 0.018 0.024 0.46 0.61
F 0.030 0.045 0.77 1.14
J 0.018 0.023 0.46 0.58
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.024 0.040 0.60 1.01
U 0.020 −−− 0.51 −−−
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H 0.386 0.410 9.80 10.40
H
P1-P3P4-P6P7-P7

NTD23N03RT4

Mfr. #:
Buy NTD23N03RT4
Manufacturer:
ON Semiconductor
Description:
MOSFET 25V 23A N-Channel
Lifecycle:
New from this manufacturer.
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