STP6NK50Z - STF6NK50Z - STD6NK50Z
2/12
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
≤ 5.6A, di/dt ≤ 200 A/µs, V
DD
≤ V
(BR)DSS
,T
j
≤ T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP6NK50Z
STD6NK50Z
STF6NK50Z
V
DS
Drain-source Voltage (V
GS
=0)
500 V
V
DGR
Drain-gate Voltage (R
GS
=20kΩ)
500 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at T
C
=25°C
5.6 5.6 (*) A
I
D
Drain Current (continuous) at T
C
= 100°C
3.5 3.5 (*) A
I
DM
( )
Drain Current (pulsed) 22.4 22.4 (*) A
P
TOT
Total Dissipation at T
C
=25°C
90 25 W
Derating Factor 0.72 0.2 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2500 V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55to150 °C
TO-220
DPAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.38 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
5.6 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25°C, I
D
=I
AR
,V
DD
=50V)
180 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-SourceBreakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
