MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
10
MMBT3906WT1, SMMBT3906WT1
h PARAMETERS
h
fe
, CURRENT GAIN
Figure 28. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 29. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 30. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 31. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
70
10
30
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k
ie
0.1 0.2 1.0 2.0
5.0 10
0.5
0.1 0.2 1.0 2.0
5.0 10
0.5
7.0
5.0
0.1 0.2 1.0 2.0
5.0 10
0.5
m
-4
(V
CE
= −10 Vdc, f = 1.0 kHz, T
A
= 25
°
C)
50
20
Ω)
MMBT3906WT1
MMBT3906WT1
MMBT3906WT1
MMBT3906WT1
0.3 0.7 3.0
7.0
0.3
0.7 3.0 7.0
0.3
0.7
3.0
7.0
0.3 0.7 3.0
7.0
0.3 0.7 3.0
7.0
STATIC CHARACTERISTICS
Figure 32. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
100
1000
10
1.0
T
J
= 150°C
25°C
-55°C
h
FE
, DC CURRENT GAIN
10 100 1000
V
CE
= 1 V
MMBT3906WT1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
11
MMBT3906WT1, SMMBT3906WT1
Figure 33. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3906WT1
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
0.05
0.15
0.20
0.25
0.40
0.45
0.50
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 36. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.10
0.30
I
C
/I
B
= 10
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
150°C
−55°C
25°C
V
CE
= 1 V
0.35
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
www.onsemi.com
12
MMBT3906WT1, SMMBT3906WT1
Figure 37. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
-0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100 200
-1.0
-1.5
-2.0
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
q
VC
FOR V
CE(sat)
q
VS
FOR V
BE(sat)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
MMBT3906WT1
C
ibo
C
obo
Figure 38. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
T
J
= 25°C
T
J
= 125°C
MMBT3906WT1
Figure 39. Current Gain Bandwidth Product
vs. Collector Current
Figure 40. Safe Operating Area
I
C
, COLLECTOR CURRENT (mA) V
CE
, COLLECTOR EMITTER VOLTAGE (V)
10001001010.1
10
100
1000
1001010.1
0.001
0.01
0.1
1
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (A)
V
CE
= 1 V
T
A
= 25°C
1 mS
Thermal Limit
1 S
100 mS 10 mS

MMBT3904WT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 60V NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union