VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3
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Vishay Semiconductors
Revision: 21-Sep-11
1
Document Number: 93207
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Schottky Rectifier, 1.1 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-11DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
PRODUCT SUMMARY
Package DO-204AL (DO-41)
I
F(AV)
1.1 A
V
R
90 V, 100 V
V
F
at I
F
See Electrical table
I
RM
1.0 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
1.0 mJ
Cathode Anode
DO-204AL
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.1 A
V
RRM
90/100 V
I
FSM
t
p
= 5 μs sine 85 A
V
F
1 Apk, T
J
= 25 °C 0.85 V
T
J
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-11DQ09 VS-11DQ09-M3 VS-11DQ10 VS-11DQ10-M3 UNITS
Maximum DC reverse voltage V
R
90 90 100 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
I
F(AV)
50 % duty cycle at T
C
= 75 °C, rectangular waveform 1.1
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
85
10 ms sine or 6 ms rect. pulse 14
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 0.5 A, L = 8 mH 1.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.5 A